Part Details for PJF10N60 by PanJit Semiconductor
Overview of PJF10N60 by PanJit Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for PJF10N60
PJF10N60 CAD Models
PJF10N60 Part Data Attributes
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PJF10N60
PanJit Semiconductor
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Datasheet
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PJF10N60
PanJit Semiconductor
Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | PAN JIT INTERNATIONAL INC | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PJF10N60
This table gives cross-reference parts and alternative options found for PJF10N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJF10N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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9N65G-TF3-T | Power Field-Effect Transistor, 9A I(D), 650V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | PJF10N60 vs 9N65G-TF3-T |
SSRF10N60SL | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, ITO-220, 3 PIN | Secos Corporation | PJF10N60 vs SSRF10N60SL |
2SK3102-01R | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fuji Electric Co Ltd | PJF10N60 vs 2SK3102-01R |
UK2996L-TF1-T | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | PJF10N60 vs UK2996L-TF1-T |
9N65L-TF3-T | Power Field-Effect Transistor, 9A I(D), 650V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | PJF10N60 vs 9N65L-TF3-T |
TK10A60D5 | TRANSISTOR 10 A, 600 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | PJF10N60 vs TK10A60D5 |
AP2764AI-HF | TRANSISTOR 9 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | PJF10N60 vs AP2764AI-HF |