Part Details for PJD7NA60_R2_00001 by PanJit Semiconductor
Overview of PJD7NA60_R2_00001 by PanJit Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CO-142BNCX200-001 | Amphenol Cables on Demand | Amphenol CO-142BNCX200-001 BNC Male to BNC Male (RG142) 50 Ohm Coaxial Cable Assembly (High-Temp Teflon RG142B/U) 1ft | |
| FO-DUALSTLC00-001 | Amphenol Cables on Demand | Amphenol FO-DUALSTLC00-001 ST-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x ST Male to 2 x LC Male 1m | |
| CO-316SMAX200-001 | Amphenol Cables on Demand | Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft |
Price & Stock for PJD7NA60_R2_00001
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJD7NA60R200001
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Mouser Electronics | MOSFETs 600V N-Channel MOSFET RoHS: Compliant | 0 |
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$0.4380 / $0.4760 | Order Now |
Part Details for PJD7NA60_R2_00001
PJD7NA60_R2_00001 CAD Models
PJD7NA60_R2_00001 Part Data Attributes
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PJD7NA60_R2_00001
PanJit Semiconductor
Buy Now
Datasheet
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Compare Parts:
PJD7NA60_R2_00001
PanJit Semiconductor
Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 489 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PJD7NA60_R2_00001
This table gives cross-reference parts and alternative options found for PJD7NA60_R2_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJD7NA60_R2_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 7N60L-TQ2-T-M | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_R2_00001 vs 7N60L-TQ2-T-M |
| KF7N60P | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | KEC | PJD7NA60_R2_00001 vs KF7N60P |
| 7N65L-TA3-T | Power Field-Effect Transistor, 7.4A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_R2_00001 vs 7N65L-TA3-T |
| 7N60AG-TA3-T | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_R2_00001 vs 7N60AG-TA3-T |
| 7N60L-TQ2-R-M | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_R2_00001 vs 7N60L-TQ2-R-M |
| 7N65G-TA3-T | Power Field-Effect Transistor, 7.4A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_R2_00001 vs 7N65G-TA3-T |
| 7N60L-TQ2-R-F | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_R2_00001 vs 7N60L-TQ2-R-F |
| 7N60G-T2Q-T-M | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_R2_00001 vs 7N60G-T2Q-T-M |
| 7N65L-TQ2-R | Power Field-Effect Transistor, 7.4A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_R2_00001 vs 7N65L-TQ2-R |
| KF7N65P | Power Field-Effect Transistor, 7A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | KEC | PJD7NA60_R2_00001 vs KF7N65P |