Part Details for PJA3415A_R1_00001 by PanJit Semiconductor
Overview of PJA3415A_R1_00001 by PanJit Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for PJA3415A_R1_00001
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJA3415AR100001
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Mouser Electronics | MOSFET 30V P-Channel Enhancement Mode MOSFET RoHS: Compliant | 2247 |
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$0.0650 / $0.4300 | Buy Now |
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NAC | 30V P-Channel Enhancement Mode MOSFET RoHS: Compliant Min Qty: 1 Package Multiple: 3000 Container: Reel | 108000 |
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$0.0450 / $0.0500 | Buy Now |
DISTI #
PJA3415A_R1_00001
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Avnet Silica | Transistor MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R (Alt: PJA3415A_R1_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for PJA3415A_R1_00001
PJA3415A_R1_00001 CAD Models
PJA3415A_R1_00001 Part Data Attributes
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PJA3415A_R1_00001
PanJit Semiconductor
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Datasheet
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Compare Parts:
PJA3415A_R1_00001
PanJit Semiconductor
Power Field-Effect Transistor, 4.5A I(D), 20V, 0.046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | PANJIT | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.046 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PJA3415A_R1_00001
This table gives cross-reference parts and alternative options found for PJA3415A_R1_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJA3415A_R1_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PJA3415A_R2_00001 | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PanJit Semiconductor | PJA3415A_R1_00001 vs PJA3415A_R2_00001 |
UT2311L-AE3-R | Power Field-Effect Transistor, 4A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | PJA3415A_R1_00001 vs UT2311L-AE3-R |
ELM36407EA-S | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-26, 6 PIN | ELM Technology Corp | PJA3415A_R1_00001 vs ELM36407EA-S |
RTQ040P02TR | Power Field-Effect Transistor, 4A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN | ROHM Semiconductor | PJA3415A_R1_00001 vs RTQ040P02TR |
IRLML6402TRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | PJA3415A_R1_00001 vs IRLML6402TRPBF |
NTVS4101PT1 | TRANSISTOR 3.9 A, 20 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 766AC, FLIP CHIP-4, FET General Purpose Power | onsemi | PJA3415A_R1_00001 vs NTVS4101PT1 |
UT2321L-AE3-R | Power Field-Effect Transistor, 3.8A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | PJA3415A_R1_00001 vs UT2321L-AE3-R |
BL3435 | Small Signal MOSFET; Channel Polarity: P channel; PD Max (W): 1.4W; V(BR)DSS Min (V): -20V; ID Max (A): -3.5A; RDS(ON) Max (Ω): 0.07 Ohm; ID (A): -3.5A; VGS (V): -4.5V; VGS Max (V): -1V; ID (mA): -250mA; GFS Min (S): 15 S; VDS (V): -5V; ID (A) 1: -3.5A; Package: SOT-23 | Galaxy Microelectronics | PJA3415A_R1_00001 vs BL3435 |
AP2317GN-HF | TRANSISTOR 4.2 A, 20 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | PJA3415A_R1_00001 vs AP2317GN-HF |
IRLML6402GTRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | PJA3415A_R1_00001 vs IRLML6402GTRPBF |