Part Details for PHT8N06LT by NXP Semiconductors
Overview of PHT8N06LT by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for PHT8N06LT
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | TRENCHMOS TRANSISTOR LOGIC LEVEL FET Power Field-Effect Transistor, 2.2A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ | |
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Win Source Electronics | TrenchMOS transistor Logic level FET | 5065 |
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$2.5440 / $3.8160 | Buy Now |
Part Details for PHT8N06LT
PHT8N06LT CAD Models
PHT8N06LT Part Data Attributes
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PHT8N06LT
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PHT8N06LT
NXP Semiconductors
TRANSISTOR 2.2 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-223, 4 PIN, FET General Purpose Power
Select a part to compare: |
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | SOT-223 | |
Package Description | PLASTIC, SOT-223, 4 PIN | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | |
Avalanche Energy Rating (Eas) | 30 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 2.2 A | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.8 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PHT8N06LT
This table gives cross-reference parts and alternative options found for PHT8N06LT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHT8N06LT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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PHT8N06LT115 | NXP Semiconductors | Check for Price | TRANSISTOR 3.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | PHT8N06LT vs PHT8N06LT115 |
934054610135 | Nexperia | Check for Price | Power Field-Effect Transistor | PHT8N06LT vs 934054610135 |
PHT8N06LTT/R | NXP Semiconductors | Check for Price | TRANSISTOR 2.2 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power | PHT8N06LT vs PHT8N06LTT/R |
PHT8N06LT,135 | NXP Semiconductors | Check for Price | N-channel TrenchMOS logic level FET SC-73 4-Pin | PHT8N06LT vs PHT8N06LT,135 |
934054590135 | NXP Semiconductors | Check for Price | TRANSISTOR 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | PHT8N06LT vs 934054590135 |
PHT11N06TT/R | NXP Semiconductors | Check for Price | TRANSISTOR 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | PHT8N06LT vs PHT11N06TT/R |
PHT11N06LTT/R | NXP Semiconductors | Check for Price | TRANSISTOR 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power | PHT8N06LT vs PHT11N06LTT/R |
PHT11N06LT/T3 | Nexperia | Check for Price | Power Field-Effect Transistor | PHT8N06LT vs PHT11N06LT/T3 |
PHT11N06T | NXP Semiconductors | Check for Price | TRANSISTOR 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power | PHT8N06LT vs PHT11N06T |
IRFL4105PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN | PHT8N06LT vs IRFL4105PBF |