Part Details for PHT6N06T,135 by NXP Semiconductors
Overview of PHT6N06T,135 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for PHT6N06T,135
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | PHT6N06T - 5.5A, 55V, 0.15ohm, N-Channel Power MOSFET, SC-73 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 11709 |
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$0.1934 / $0.2275 | Buy Now |
Part Details for PHT6N06T,135
PHT6N06T,135 CAD Models
PHT6N06T,135 Part Data Attributes:
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PHT6N06T,135
NXP Semiconductors
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Datasheet
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Compare Parts:
PHT6N06T,135
NXP Semiconductors
PHT6N06T - N-channel TrenchMOS standard level FET SC-73 4-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SC-73 | |
| Package Description | PLASTIC, SC-73, 4 PIN | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT223 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | ESD PROTECTED | |
| Avalanche Energy Rating (Eas) | 15 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PHT6N06T,135
This table gives cross-reference parts and alternative options found for PHT6N06T,135. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHT6N06T,135, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PHT6N06T,135 | PHT6N06T - N-channel TrenchMOS standard level FET@en-us SC-73 4-Pin | Nexperia | PHT6N06T,135 vs PHT6N06T,135 |
| PHT6N06TT/R | Power Field-Effect Transistor | Nexperia | PHT6N06T,135 vs PHT6N06TT/R |
| PHT6N06TT/R | TRANSISTOR 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power | NXP Semiconductors | PHT6N06T,135 vs PHT6N06TT/R |