Part Details for PHP9N60E by NXP Semiconductors
Results Overview of PHP9N60E by NXP Semiconductors
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
PHP9N60E Information
PHP9N60E by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PHP9N60E
PHP9N60E CAD Models
PHP9N60E Part Data Attributes
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PHP9N60E
NXP Semiconductors
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Datasheet
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PHP9N60E
NXP Semiconductors
TRANSISTOR 8.7 A, 600 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 678 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 8.7 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 156 W | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |