There are no models available for this part yet.
Overview of PHP12N10E127 by NXP Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for PHP12N10E127 by NXP Semiconductors
Part Data Attributes for PHP12N10E127 by NXP Semiconductors
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
NXP SEMICONDUCTORS
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
70 mJ
|
Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
100 V
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Drain Current-Max (ID)
|
14 A
|
Drain-source On Resistance-Max
|
0.16 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-220AB
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JESD-30 Code
|
R-PSFM-T3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
|
56 A
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Qualification Status
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Not Qualified
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Surface Mount
|
NO
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Terminal Form
|
THROUGH-HOLE
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Terminal Position
|
SINGLE
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Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for PHP12N10E127
This table gives cross-reference parts and alternative options found for PHP12N10E127. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHP12N10E127, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NDB510BL86Z | Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | PHP12N10E127 vs NDB510BL86Z |
BUK463-100A118 | TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | PHP12N10E127 vs BUK463-100A118 |
BUK453-100A127 | TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | PHP12N10E127 vs BUK453-100A127 |
PHD12N10E118 | TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | PHP12N10E127 vs PHD12N10E118 |