Part Details for PHN1011 by NXP Semiconductors
Results Overview of PHN1011 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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PHN1011 Information
PHN1011 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PHN1011
PHN1011 CAD Models
PHN1011 Part Data Attributes
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PHN1011
NXP Semiconductors
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Datasheet
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PHN1011
NXP Semiconductors
TRANSISTOR 11 A, 25 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLATIC, SO-8, FET General Purpose Power
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOIC | |
| Package Description | PLATIC, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PHN1011
This table gives cross-reference parts and alternative options found for PHN1011. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHN1011, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7413GPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | PHN1011 vs IRF7413GPBF |
| 2SK2556 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 6A I(D), 30V, 0.078ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET | PHN1011 vs 2SK2556 |
| IRF7413TRPBF-1 | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | PHN1011 vs IRF7413TRPBF-1 |
| BSO304SN | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6.4A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | PHN1011 vs BSO304SN |
| STS7NF30L | STMicroelectronics | Check for Price | 7A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 | PHN1011 vs STS7NF30L |
| IRF7471PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | PHN1011 vs IRF7471PBF |
| STS10NF30L | STMicroelectronics | Check for Price | 10A, 30V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 | PHN1011 vs STS10NF30L |
| FSS232 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 9A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | PHN1011 vs FSS232 |
| STS17NH3LL | STMicroelectronics | Check for Price | 17A, 30V, 0.0075ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8 | PHN1011 vs STS17NH3LL |
| FSS244 | SANYO Semiconductor Co Ltd | Check for Price | Power Field-Effect Transistor, 10A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | PHN1011 vs FSS244 |