Datasheets
PHMB600A6 by: Nihon Inter Electronics Corporation

Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel

Part Details for PHMB600A6 by Nihon Inter Electronics Corporation

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PHMB600A6 Information

PHMB600A6 by Nihon Inter Electronics Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for PHMB600A6

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PHMB600A6 Part Data Attributes

PHMB600A6 Nihon Inter Electronics Corporation
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PHMB600A6 Nihon Inter Electronics Corporation Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel
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Part Life Cycle Code Obsolete
Ihs Manufacturer NIHON INTER ELECTRONICS CORP
Package Description FLANGE MOUNT, R-XUFM-X4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 600 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2080 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 450 ns
VCEsat-Max 2.6 V