Part Details for PHMB300B12 by Nihon Inter Electronics Corporation
Results Overview of PHMB300B12 by Nihon Inter Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
PHMB300B12 Information
PHMB300B12 by Nihon Inter Electronics Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PHMB300B12
PHMB300B12 CAD Models
PHMB300B12 Part Data Attributes
|
|
PHMB300B12
Nihon Inter Electronics Corporation
Buy Now
Datasheet
|
Compare Parts:
PHMB300B12
Nihon Inter Electronics Corporation
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel,
Select a part to compare: |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NIHON INTER ELECTRONICS CORP | |
| Package Description | FLANGE MOUNT, R-XUFM-X4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1600 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 800 ns | |
| Turn-on Time-Nom (ton) | 400 ns | |
| VCEsat-Max | 2.4 V |