Datasheets
PHD9NQ20T/T3 by:

TRANSISTOR 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power

Part Details for PHD9NQ20T/T3 by NXP Semiconductors

Overview of PHD9NQ20T/T3 by NXP Semiconductors

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

Part Details for PHD9NQ20T/T3

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PHD9NQ20T/T3 Part Data Attributes

PHD9NQ20T/T3 NXP Semiconductors
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PHD9NQ20T/T3 NXP Semiconductors TRANSISTOR 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SC-63
Package Description PLASTIC, SMD, SC-63, DPAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 93 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 35 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PHD9NQ20T/T3

This table gives cross-reference parts and alternative options found for PHD9NQ20T/T3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHD9NQ20T/T3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PHD9NQ20T/T3 Nexperia Check for Price Power Field-Effect Transistor PHD9NQ20T/T3 vs PHD9NQ20T/T3
934055766118 Nexperia Check for Price Power Field-Effect Transistor PHD9NQ20T/T3 vs 934055766118
PHD9NQ20T Nexperia Check for Price Power Field-Effect Transistor PHD9NQ20T/T3 vs PHD9NQ20T
Part Number Manufacturer Composite Price Description Compare
PHD9NQ20T,118 Nexperia Check for Price N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin PHD9NQ20T/T3 vs PHD9NQ20T,118
IRLR210ATF Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 PHD9NQ20T/T3 vs IRLR210ATF
IRFR2229A Intersil Corporation Check for Price 3.8A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA PHD9NQ20T/T3 vs IRFR2229A
FQU5N20TU Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 PHD9NQ20T/T3 vs FQU5N20TU
IRFR221 Harris Semiconductor Check for Price Power Field-Effect Transistor, 4.6A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA PHD9NQ20T/T3 vs IRFR221
BUK464-200A NXP Semiconductors Check for Price TRANSISTOR 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power PHD9NQ20T/T3 vs BUK464-200A
IRLR210A Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 PHD9NQ20T/T3 vs IRLR210A
FQD4N20TM onsemi $0.3581 N-Channel QFET® MOSFET 200V, 3A, 1.4Ω, DPAK-3 / TO-252-3, 2500-REEL PHD9NQ20T/T3 vs FQD4N20TM
IRFR212 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET PHD9NQ20T/T3 vs IRFR212
IRFR220B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 PHD9NQ20T/T3 vs IRFR220B

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