Part Details for PHD20N06T by NXP Semiconductors
Overview of PHD20N06T by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for PHD20N06T
PHD20N06T CAD Models
PHD20N06T Part Data Attributes
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PHD20N06T
NXP Semiconductors
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Datasheet
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PHD20N06T
NXP Semiconductors
TRANSISTOR 18 A, 55 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NXP | |
| Avalanche Energy Rating (Eas) | 36 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 51 W | |
| Pulsed Drain Current-Max (IDM) | 73 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PHD20N06T
This table gives cross-reference parts and alternative options found for PHD20N06T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHD20N06T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTD20N06HDT4 | Power MOSFET 20 Amps, 60 Volts, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | onsemi | PHD20N06T vs MTD20N06HDT4 |
| STD20NE06T4 | 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | STMicroelectronics | PHD20N06T vs STD20NE06T4 |
| STD20NE06 | 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | STMicroelectronics | PHD20N06T vs STD20NE06 |
| MTD20N06HDLT4 | 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | onsemi | PHD20N06T vs MTD20N06HDLT4 |
| PHD20N06T,118 | PHD20N06T - N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin | Nexperia | PHD20N06T vs PHD20N06T,118 |
| MTD20N06HD | 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | PHD20N06T vs MTD20N06HD |
| PHD20N06T | Power Field-Effect Transistor | Nexperia | PHD20N06T vs PHD20N06T |
| MTD20N06HDL | 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | PHD20N06T vs MTD20N06HDL |
| 934056617118 | Power Field-Effect Transistor | Nexperia | PHD20N06T vs 934056617118 |
| MTD20N06HDL | 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | onsemi | PHD20N06T vs MTD20N06HDL |