There are no models available for this part yet.
Overview of PH5330E,115 by NXP Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Energy and Power Systems
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
CAD Models for PH5330E,115 by NXP Semiconductors
Part Data Attributes for PH5330E,115 by NXP Semiconductors
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
NXP SEMICONDUCTORS
|
|
Part Package Code
|
SOIC
|
|
Package Description
|
SMALL OUTLINE, R-PSSO-G4
|
|
Pin Count
|
4
|
|
Manufacturer Package Code
|
SOT669
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Avalanche Energy Rating (Eas)
|
130 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
80 A
|
|
Drain-source On Resistance-Max
|
0.0085 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
MO-235
|
|
JESD-30 Code
|
R-PSSO-G4
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
4
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
250 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Tin (Sn)
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for PH5330E,115
This table gives cross-reference parts and alternative options found for PH5330E,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PH5330E,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PH5330E | TRANSISTOR 80 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, MO-235, LFPAK-4, FET General Purpose Power | NXP Semiconductors | PH5330E,115 vs PH5330E |
| PSMN6R0-30YL,115 | PSMN6R0-30YL - N-channel 30 V 6 mΩ logic level MOSFET in LFPAK SOIC 4-Pin | NXP Semiconductors | PH5330E,115 vs PSMN6R0-30YL,115 |
| PSMN6R0-30YL | TRANSISTOR 79 A, 30 V, 0.00787 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power | NXP Semiconductors | PH5330E,115 vs PSMN6R0-30YL |
| PSMN6R0-30YL,115 | PSMN6R0-30YL - N-channel 30 V 6 mΩ logic level MOSFET in LFPAK@en-us SOIC 4-Pin | Nexperia | PH5330E,115 vs PSMN6R0-30YL,115 |