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PDTA124EMB,315 by:
NXP Semiconductors
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NXP Semiconductors
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PDTA124EMB - PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ DFN 3-Pin

Part Details for PDTA124EMB,315 by NXP Semiconductors

Results Overview of PDTA124EMB,315 by NXP Semiconductors

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Applications Consumer Electronics Education and Research Industrial Automation Audio and Video Systems Electronic Manufacturing

PDTA124EMB,315 Information

PDTA124EMB,315 by NXP Semiconductors is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PDTA124EMB,315

Part # Distributor Description Stock Price Buy
DISTI # 86137617
Verical Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin DFN-B T/R Min Qty: 13762 Package Multiple: 1 Date Code: 1501 Americas - 110000
  • 13,762 $0.0273
$0.0273 Buy Now
DISTI # 86129481
Verical Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin DFN-B T/R Min Qty: 13762 Package Multiple: 1 Date Code: 1301 Americas - 19990
  • 13,762 $0.0273
$0.0273 Buy Now
Rochester Electronics PDTA124EMB - Small Signal Bipolar Transistor, 0.1A, 50V, PNP, XQFN3 RoHS: Compliant Status: Active Min Qty: 1 129990
  • 1 $0.0257
  • 25 $0.0252
  • 100 $0.0242
  • 500 $0.0231
  • 1,000 $0.0218
$0.0218 / $0.0257 Buy Now

Part Details for PDTA124EMB,315

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PDTA124EMB,315 Part Data Attributes

PDTA124EMB,315 NXP Semiconductors
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PDTA124EMB,315 NXP Semiconductors PDTA124EMB - PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ DFN 3-Pin
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code DFN
Pin Count 3
Manufacturer Package Code SOT883B
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 60
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.25 W
Surface Mount YES
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON