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PDMB100B12C2 by:

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for PDMB100B12C2 by Nihon Inter Electronics Corporation

Overview of PDMB100B12C2 by Nihon Inter Electronics Corporation

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Part Details for PDMB100B12C2

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PDMB100B12C2 Part Data Attributes

PDMB100B12C2 Nihon Inter Electronics Corporation
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PDMB100B12C2 Nihon Inter Electronics Corporation Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Part Life Cycle Code Transferred
Ihs Manufacturer NIHON INTER ELECTRONICS CORP
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 800 ns
Turn-on Time-Nom (ton) 400 ns
VCEsat-Max 2.4 V

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