Datasheets
PD85035TR-E by: STMicroelectronics

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Part Details for PD85035TR-E by STMicroelectronics

Overview of PD85035TR-E by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for PD85035TR-E

Part # Distributor Description Stock Price Buy
DISTI # 56P9940
Newark Rf Power |Stmicroelectronics PD85035TR-E Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # PD85035TR-E-ND
DigiKey RF MOSFET LDMOS 13.6V PWRSO-10RF Lead time: 52 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
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DISTI # PD85035TR-E
Avnet Americas 13.6V RF LDMOS - HF to 2GHz - Tape and Reel (Alt: PD85035TR-E) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Reel 0
RFQ
STMicroelectronics RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs RoHS: Compliant Min Qty: 1 0
  • 1 $29.1100
  • 10 $26.8500
  • 25 $25.6500
  • 100 $22.9300
  • 250 $21.8700
$21.8700 / $29.1100 Buy Now
DISTI # PD85035TR-E
Avnet Americas 13.6V RF LDMOS - HF to 2GHz - Tape and Reel (Alt: PD85035TR-E) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Reel 0
RFQ
DISTI # PD85035TR-E
Avnet Silica (Alt: PD85035TR-E) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # PD85035TR-E
EBV Elektronik (Alt: PD85035TR-E) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for PD85035TR-E

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PD85035TR-E Part Data Attributes:

PD85035TR-E STMicroelectronics
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PD85035TR-E STMicroelectronics RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SOT
Package Description PLASTIC, POWER, SO-10RF, 2 PIN
Pin Count 10
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 8 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 165 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 95 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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