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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PD57018-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
56P9905
|
Newark | Power R.f. |Stmicroelectronics PD57018-E RoHS: Not Compliant Min Qty: 400 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
DISTI #
497-5305-5-ND
|
DigiKey | RF MOSFET LDMOS 28V POWERSO10 Min Qty: 1 Lead time: 23 Weeks Container: Tube |
367 In Stock |
|
$21.8940 / $31.9400 | Buy Now |
DISTI #
PD57018-E
|
Avnet Americas | Transistor RF FET N-CH 65V 2.5A 945MHz 3-Pin PowerSO-10RF Tube - Bag (Alt: PD57018-E) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks, 0 Days Container: Bag | 0 |
|
$18.7262 / $19.9114 | Buy Now |
DISTI #
511-PD57018-E
|
Mouser Electronics | RF MOSFET Transistors POWER RF Transistor RoHS: Compliant | 75 |
|
$21.9000 / $31.5500 | Buy Now |
DISTI #
E02:0323_00039741
|
Arrow Electronics | Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube Min Qty: 1 Package Multiple: 1 Lead time: 23 Weeks Date Code: 2504 | Europe - 2674 |
|
$21.5857 / $31.3638 | Buy Now |
|
STMicroelectronics | RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs RoHS: Compliant Min Qty: 1 | 75 |
|
$21.4300 / $30.9200 | Buy Now |
DISTI #
88037102
|
Verical | Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube Min Qty: 1 Package Multiple: 1 Date Code: 2504 | Americas - 2674 |
|
$21.5906 / $31.3710 | Buy Now |
DISTI #
PD57018-E
|
TME | Transistor: N-MOSFET, unipolar, RF, 65V, 2.5A, 31.7W, PowerSO10RF Min Qty: 1 | 0 |
|
$23.9000 / $33.4400 | RFQ |
DISTI #
PD57018-E
|
Avnet Silica | Transistor RF FET NCH 65V 25A 945MHz 3Pin PowerSO10RF Tube (Alt: PD57018-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | Silica - 800 |
|
Buy Now | |
DISTI #
PD57018-E
|
EBV Elektronik | Transistor RF FET NCH 65V 25A 945MHz 3Pin PowerSO10RF Tube (Alt: PD57018-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 24 Weeks, 0 Days | EBV - 200 |
|
Buy Now |
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PD57018-E
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
PD57018-E
STMicroelectronics
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | SOT | |
Package Description | ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN | |
Pin Count | 10 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 23 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
Drain Current-Max (ID) | 2.5 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 165 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 250 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 31.7 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for PD57018-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD57018-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
PD57018STR-E | STMicroelectronics | Check for Price | RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs | PD57018-E vs PD57018STR-E |
934056838112 | NXP Semiconductors | Check for Price | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power | PD57018-E vs 934056838112 |
PD57018S | STMicroelectronics | Check for Price | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, POWER, PLASTIC, SO-2 | PD57018-E vs PD57018S |
The recommended operating temperature range for PD57018-E is -40°C to 125°C.
To ensure reliable communication, use a proper PCB layout, ensure signal integrity, and follow the recommended pin configuration and signal routing guidelines.
The PD57018-E supports data transfer rates up to 100 Mbps.
Yes, the PD57018-E is designed to withstand high-vibration environments, but ensure proper mounting and mechanical stress relief to prevent damage.
Use proper shielding, grounding, and filtering techniques to minimize EMI effects. Follow STMicroelectronics' guidelines for EMI mitigation.