Datasheets
PD57006-E by: STMicroelectronics

6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

Part Details for PD57006-E by STMicroelectronics

Results Overview of PD57006-E by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

PD57006-E Information

PD57006-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for PD57006-E

PD57006-E CAD Models

PD57006-E Part Data Attributes

PD57006-E STMicroelectronics
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PD57006-E STMicroelectronics 6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SOT
Package Description ROHS COMPLIANT, PLASTIC, POWERSO-10RF, SMD, 2 PIN
Pin Count 10
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 1 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for PD57006-E

This table gives cross-reference parts and alternative options found for PD57006-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD57006-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PD57006S STMicroelectronics Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, POWER, PLASTIC, SO-2 PD57006-E vs PD57006S
PD57006-01 STMicroelectronics Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, POWERFLAT-12 PD57006-E vs PD57006-01

PD57006-E Related Parts

PD57006-E Frequently Asked Questions (FAQ)

  • STMicroelectronics recommends a 2-layer or 4-layer PCB with a solid ground plane and a thermal relief pattern under the device to ensure optimal thermal performance.

  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure proper airflow around the device.

  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, decreased performance, and potentially even device failure. It's crucial to ensure the device operates within the recommended temperature range.

  • While the PD57006-E is designed to be robust, it's essential to ensure the device is properly secured to the PCB and the PCB is securely fastened to the system to minimize the effects of vibration.

  • To troubleshoot OCP-related issues, check the input voltage, output current, and PCB layout for any potential issues. Ensure the device is properly configured, and the OCP threshold is set correctly.