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Transistors / RF Power Field-Effect Transistors / PD55008-E
Datasheets
PD55008-E by: STMicroelectronics

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Part Details for PD55008-E by STMicroelectronics

Overview of PD55008-E by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Audio and Video Systems Entertainment and Gaming

Price & Stock for PD55008-E

Part # Distributor Description Stock Price Buy
DISTI # 51AC9372
Newark Rf Fet, 40V, 4A, Powerso-10Rf, Drain Source Voltage Vds:40V, Continuous Drain Current Id:4A, Power Dissipation Pd:52.8W, Operating Frequency Min:-, Operating Frequency Max:-, Rf Transistor Case:Powerso-10Rf, No. Of Pins:3Pins, Rohs Compliant: Yes |Stmicroelectronics PD55008-E Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 86
  • 1 $13.5500
  • 10 $12.5100
  • 25 $12.5100
  • 50 $12.5100
  • 100 $12.5100
  • 250 $12.5100
  • 500 $12.5100
$12.5100 / $13.5500 Buy Now
DISTI # 497-5299-5-ND
DigiKey RF MOSFET LDMOS 12.5V POWERSO10 Min Qty: 1 Lead time: 23 Weeks Container: Tube 319
In Stock
  • 1 $16.9400
  • 10 $15.5670
  • 50 $14.9218
  • 100 $13.1474
  • 250 $12.5021
  • 500 $11.6955
$11.6955 / $16.9400 Buy Now
DISTI # PD55008-E
Avnet Americas Transistor RF FET N-CH 40V 4A 500MHz 3-Pin PowerSO-10RF Tube - Bag (Alt: PD55008-E) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks, 0 Days Container: Bag 0
  • 400 $11.8592
  • 800 $11.6196
  • 1,600 $11.3801
  • 2,400 $11.1405
  • 3,200 $10.9009
  • 4,000 $10.6613
  • 40,000 $10.4217
$10.4217 / $11.8592 Buy Now
DISTI # 511-PD55008-E
Mouser Electronics RF MOSFET Transistors RF POWER TRANS RoHS: Compliant 537
  • 1 $16.9400
  • 10 $15.4600
  • 25 $15.4000
  • 50 $14.7200
  • 100 $13.1100
  • 250 $12.5000
  • 400 $11.9300
$11.9300 / $16.9400 Buy Now
STMicroelectronics RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs RoHS: Compliant Min Qty: 1 537
  • 1 $16.6000
  • 10 $15.0600
  • 25 $14.9500
  • 50 $14.2600
  • 100 $12.8200
  • 250 $12.2500
  • 400 $11.6900
$11.6900 / $16.6000 Buy Now
Future Electronics PD55008-E Series 500 MHz 8 W 40 V N-Channel RF Power Transistor - POWERSO-10RF RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 50 Container: Tray 0
Tray
  • 50 $11.8400
  • 100 $11.7800
  • 150 $11.7400
  • 200 $11.7200
  • 250 $11.6300
$11.6300 / $11.8400 Buy Now
Ameya Holding Limited PD55008-E Series 500 MHz 8 W 40 V N-Channel RF Power Transistor - POWERSO-10RF 1057
RFQ
DISTI # PD55008-E
Avnet Silica Transistor RF FET N-CH 40V 4A 500MHz 3-Pin PowerSO-10RF Tube (Alt: PD55008-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Silica - 250
Buy Now
DISTI # PD55008-E
EBV Elektronik Transistor RF FET N-CH 40V 4A 500MHz 3-Pin PowerSO-10RF Tube (Alt: PD55008-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 24 Weeks, 0 Days EBV - 0
Buy Now
LCSC 8W PowerSO-10RF MOSFETs ROHS 3
  • 1 $17.3301
  • 10 $16.7856
$16.7856 / $17.3301 Buy Now

Part Details for PD55008-E

PD55008-E Part Data Attributes:

Parametric Data
PD55008-E STMicroelectronics
Buy Now Datasheet
Compare Parts:
PD55008-E STMicroelectronics RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SOT
Package Description ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Pin Count 10
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 23 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 4 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 165 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 52.8 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for PD55008-E

This table gives cross-reference parts and alternative options found for PD55008-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD55008-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PD55008TR-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs STMicroelectronics PD55008-E vs PD55008TR-E
Part Number Description Manufacturer Compare
PD55008TR-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs STMicroelectronics PD55008-E vs PD55008TR-E
PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs STMicroelectronics PD55008-E vs PD55008S-E

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