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NZT6717 by:

Small Signal Bipolar Transistor, 1.2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261

Part Details for NZT6717 by National Semiconductor Corporation

Overview of NZT6717 by National Semiconductor Corporation

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Part Details for NZT6717

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NZT6717 Part Data Attributes

NZT6717 National Semiconductor Corporation
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NZT6717 National Semiconductor Corporation Small Signal Bipolar Transistor, 1.2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Case Connection COLLECTOR
Collector Current-Max (IC) 1.2 A
Collector-Base Capacitance-Max 30 pF
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 50
JEDEC-95 Code TO-261
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 50 MHz
VCEsat-Max 0.5 V

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