Datasheets
NXH100B120H3Q0PTG by: onsemi

Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. 1.6mm press-fit pins, TIM, Q0, 24-BTRAY

Part Details for NXH100B120H3Q0PTG by onsemi

Overview of NXH100B120H3Q0PTG by onsemi

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Price & Stock for NXH100B120H3Q0PTG

Part # Distributor Description Stock Price Buy
DISTI # 41AH2123
Newark Igbt Mod, Dual N-Ch, 1.2Kv, 50A, 186W Rohs Compliant: Yes |Onsemi NXH100B120H3Q0PTG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $53.2900
  • 5 $53.2900
  • 10 $53.2800
  • 48 $53.2800
$53.2800 / $53.2900 Buy Now
DISTI # 5556-NXH100B120H3Q0PTG-ND
DigiKey IGBT MODULE 1200V 50A 186W 22PIM Min Qty: 1 Lead time: 11 Weeks Container: Tray 22
In Stock
  • 1 $61.2900
  • 24 $51.2362
$51.2362 / $61.2900 Buy Now
DISTI # NXH100B120H3Q0PTG
Avnet Americas Transistor IGBT Module N-Channel 1200V 50A Through Hole - Trays (Alt: NXH100B120H3Q0PTG) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 11 Weeks, 0 Days Container: Tray 240 Factory Stock
  • 24 $52.8757
  • 48 $51.2361
  • 96 $49.9865
  • 144 $52.5499
  • 192 $48.2222
$48.2222 / $52.8757 Buy Now
DISTI # 863-NXH100B120H3Q0PG
Mouser Electronics IGBT Modules PIM 60-80KW Q0BOOST-L57 1200V, 100A (PRESS-FIT PIN, TIM) RoHS: Compliant 28
  • 1 $51.2700
  • 10 $51.2600
  • 24 $51.2300
$51.2300 / $51.2700 Buy Now
Future Electronics PIM 60-80kW Q0Boost-L57 1200V, 100A (Press-fit Pin, TIM) RoHS: Compliant pbFree: Yes Min Qty: 24 Package Multiple: 24 Lead time: 11 Weeks Container: Tray 0
Tray
  • 24 $50.6800
  • 48 $50.3200
  • 72 $50.1100
  • 96 $49.8500
$49.8500 / $50.6800 Buy Now
Onlinecomponents.com Igbt Mod, Dual N-Ch, 1.2Kv, 50A, 186W Rohs Compliant: Yes |Onsemi NXH100B120H3Q0PTG RoHS: Compliant 0
  • 6 $81.9800
  • 12 $61.4800
  • 18 $57.3800
  • 24 $56.2400
$56.2400 / $81.9800 Buy Now
DISTI # NXH100B120H3Q0PTG
EBV Elektronik Transistor IGBT Module N-Channel 1200V 50A Through Hole (Alt: NXH100B120H3Q0PTG) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock 30
RFQ

Part Details for NXH100B120H3Q0PTG

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NXH100B120H3Q0PTG Part Data Attributes

NXH100B120H3Q0PTG onsemi
Buy Now Datasheet
Compare Parts:
NXH100B120H3Q0PTG onsemi Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. 1.6mm press-fit pins, TIM, Q0, 24-BTRAY
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code Q0
Manufacturer Package Code 180BF
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 11 Weeks
Samacsys Manufacturer onsemi
Additional Feature RC-IGBT
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X22
Number of Elements 2
Number of Terminals 22
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 186 W
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 291 ns
Turn-on Time-Nom (ton) 61 ns
VCEsat-Max 2.3 V

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