Part Details for NXH100B120H3Q0PTG by onsemi
Results Overview of NXH100B120H3Q0PTG by onsemi
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NXH100B120H3Q0PTG Information
NXH100B120H3Q0PTG by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NXH100B120H3Q0PTG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
41AH2123
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Newark | Igbt Mod, Dual N-Ch, 1.2Kv, 50A, 186W Rohs Compliant: Yes |Onsemi NXH100B120H3Q0PTG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$53.2800 / $55.5500 | Buy Now |
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DISTI #
5556-NXH100B120H3Q0PTG-ND
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DigiKey | IGBT MODULE 1200V 50A 186W 22PIM Min Qty: 1 Lead time: 11 Weeks Container: Tray |
22 In Stock |
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$51.2362 / $67.2500 | Buy Now |
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DISTI #
NXH100B120H3Q0PTG
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Avnet Americas | Transistor IGBT Module N-Channel 1200V 50A Through Hole - Trays (Alt: NXH100B120H3Q0PTG) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 11 Weeks, 0 Days Container: Tray | 0 |
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$46.4360 / $54.1054 | Buy Now |
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DISTI #
863-NXH100B120H3Q0PG
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Mouser Electronics | IGBT Modules Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. 1.6mm ... more RoHS: Compliant | 28 |
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$51.2300 / $51.4600 | Buy Now |
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Onlinecomponents.com | Igbt Mod, Dual N-Ch, 1.2Kv, 50A, 186W Rohs Compliant: Yes |Onsemi NXH100B120H3Q0PTG RoHS: Compliant | 0 |
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$56.2400 / $81.9800 | Buy Now |
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DISTI #
NXH100B120H3Q0P
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Richardson RFPD | SILICON CARBIDE/SILICON HYBRID MODULES RoHS: Compliant Min Qty: 24 | 0 |
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$51.2400 | Buy Now |
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DISTI #
NXH100B120H3Q0PTG
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EBV Elektronik | Transistor IGBT Module NChannel 1200V 50A Through Hole (Alt: NXH100B120H3Q0PTG) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock | 270 |
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RFQ |
Part Details for NXH100B120H3Q0PTG
NXH100B120H3Q0PTG CAD Models
NXH100B120H3Q0PTG Part Data Attributes
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NXH100B120H3Q0PTG
onsemi
Buy Now
Datasheet
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Compare Parts:
NXH100B120H3Q0PTG
onsemi
Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. 1.6mm press-fit pins, TIM, Q0, 24-BTRAY
Select a part to compare: |
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | Q0 | |
| Manufacturer Package Code | 180BF | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 11 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | RC-IGBT | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X22 | |
| Number of Elements | 2 | |
| Number of Terminals | 22 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 186 W | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 291 ns | |
| Turn-on Time-Nom (ton) | 61 ns | |
| VCEsat-Max | 2.3 V |