Datasheets
NXH027B120MNF2PTG by: onsemi

Power Field-Effect Transistor

Part Details for NXH027B120MNF2PTG by onsemi

Overview of NXH027B120MNF2PTG by onsemi

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Applications Consumer Electronics Internet of Things (IoT) Smart Cities

Price & Stock for NXH027B120MNF2PTG

Part # Distributor Description Stock Price Buy
DISTI # 27AK4266
Newark Pim F2 Full Sic Boost 1200V 27Mohm Tim Press-Fit Pins/Btray |Onsemi NXH027B120MNF2PTG Min Qty: 20 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 10 $325.8400
  • 25 $321.2800
  • 50 $316.7300
  • 100 $298.5000
$298.5000 / $325.8400 Buy Now
DISTI # 488-NXH027B120MNF2PTGCT-ND
DigiKey IGBT MODULE 1200V Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 20
In Stock
  • 1 $326.7900
  • 10 $306.0820
  • 20 $306.0820
$306.0820 / $326.7900 Buy Now
DISTI # NXH027B120MNF2PTG
Avnet Americas Transistor MOSFET Array Triple N-Channel 1200V 84A 23-Pin PIM Tray - Trays (Alt: NXH027B120MNF2PTG) RoHS: Not Compliant Min Qty: 20 Package Multiple: 20 Container: Tray 0
RFQ
DISTI # 863-XH027B120MNF2PTG
Mouser Electronics Discrete Semiconductor Modules PIM F2 FULL SIC BOOST 1200V 27MOHM TIM PRESS-FIT PINS 0
  • 20 $294.5400
$294.5400 Order Now
DISTI # NXH027B120MNF2PTG
Avnet Americas Transistor MOSFET Array Triple N-Channel 1200V 84A 23-Pin PIM Tray - Trays (Alt: NXH027B120MNF2PTG) RoHS: Not Compliant Min Qty: 20 Package Multiple: 20 Container: Tray 0
RFQ
DISTI # NXH027B120MNF2PTG
EBV Elektronik Transistor MOSFET Array Triple N-Channel 1200V 84A 23-Pin PIM Tray (Alt: NXH027B120MNF2PTG) RoHS: Compliant Min Qty: 20 Package Multiple: 20 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now

Part Details for NXH027B120MNF2PTG

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NXH027B120MNF2PTG Part Data Attributes:

NXH027B120MNF2PTG onsemi
Buy Now Datasheet
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NXH027B120MNF2PTG onsemi Power Field-Effect Transistor
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 44 Weeks
Case Connection ISOLATED
Configuration COMPLEX
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 84 A
Drain-source On Resistance-Max 0.038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 64 pF
JESD-30 Code R-XUFM-X23
Number of Elements 3
Number of Terminals 23
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 134 W
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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