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Part Details for NVMTS1D2N08H by onsemi
Overview of NVMTS1D2N08H by onsemi
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Security and Surveillance
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Entertainment and Gaming
Automotive
Price & Stock for NVMTS1D2N08H
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38AH7309
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Newark | T8-80V In Pqfn88 For Automotive Market/Reel Rohs Compliant: Yes |Onsemi NVMTS1D2N08H Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.0800 | Buy Now |
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DISTI #
488-NVMTS1D2N08HCT-ND
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DigiKey | MOSFET N-CH 80V 43.5A/337A 8DFNW Min Qty: 1 Lead time: 31 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$3.0105 / $6.1800 | Buy Now |
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DISTI #
NVMTS1D2N08H
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Avnet Americas | N-Channel Power MOSFET 80V 3374A 1.1mOhm 8-Pin DFNW Surface Mount T/R - Tape and Reel (Alt: NVMTS1D2N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days Container: Reel | 0 |
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$3.0962 / $3.4659 | Buy Now |
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DISTI #
863-NVMTS1D2N08H
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Mouser Electronics | MOSFET 80V 337A 1.1mOhms | 11453 |
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$2.9800 / $6.1800 | Buy Now |
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Future Electronics | MOSFET 80V 337A 1.1mOhms RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$2.9300 | Buy Now |
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DISTI #
NVMTS1D2N08H
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Avnet Americas | N-Channel Power MOSFET 80V 3374A 1.1mOhm 8-Pin DFNW Surface Mount T/R - Tape and Reel (Alt: NVMTS1D2N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days Container: Reel | 0 |
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$3.0962 / $3.4659 | Buy Now |
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DISTI #
NVMTS1D2N08H
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Avnet Americas | N-Channel Power MOSFET 80V 3374A 1.1mOhm 8-Pin DFNW Surface Mount T/R - Tape and Reel (Alt: NVMTS1D2N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days Container: Reel | 0 |
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$3.0962 / $3.4659 | Buy Now |
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Chip 1 Exchange | INSTOCK | 3874 |
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RFQ | |
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DISTI #
NVMTS1D2N08H
|
Avnet Asia | N-Channel Power MOSFET 80V 3374A 1.1mOhm 8-Pin DFNW Surface Mount T/R (Alt: NVMTS1D2N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days | 0 |
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$2.7184 / $3.0403 | Buy Now |
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DISTI #
NVMTS1D2N08H
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Avnet Silica | N-Channel Power MOSFET 80V 3374A 1.1mOhm 8-Pin DFNW Surface Mount T/R (Alt: NVMTS1D2N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 4 Weeks, 4 Days | Silica - 0 |
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Buy Now |
Part Details for NVMTS1D2N08H
NVMTS1D2N08H CAD Models
NVMTS1D2N08H Part Data Attributes
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NVMTS1D2N08H
onsemi
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Datasheet
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Compare Parts:
NVMTS1D2N08H
onsemi
Single N-Channel Power MOSFET 80V, 337A, 1.1mΩ, 3000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DFNW-8 | |
| Manufacturer Package Code | 507AP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 72 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 3170 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 337 A | |
| Drain-source On Resistance-Max | 0.0011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 43 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |