Part Details for NVMJD8D1N04CTWG by onsemi
Overview of NVMJD8D1N04CTWG by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NVMJD8D1N04CTWG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AK8634
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Newark | T6 40V N-Ch Sg In Lfpak56 Duals Package/Reel |Onsemi NVMJD8D1N04CTWG RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6370 / $0.8050 | Buy Now |
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DISTI #
488-NVMJD8D1N04CTWGCT-ND
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DigiKey | MOSFET N-CH 40V LFPAK56 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3000 In Stock |
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$0.6364 / $2.3000 | Buy Now |
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DISTI #
NVMJD8D1N04CTWG
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Avnet Americas | T6 40V N-CH SG IN LFPAK56 - Tape and Reel (Alt: NVMJD8D1N04CTWG) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
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DISTI #
863-NVMJD8D1N04CTWG
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Mouser Electronics | MOSFETs Dual N-Channel Power MOSFET 40 V, 46 A, 8.1 mohm RoHS: Compliant | 0 |
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$0.6360 / $0.6680 | Order Now |
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DISTI #
NVMJD8D1N04CTWG
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EBV Elektronik | T6 40V N-CH SG IN LFPAK56 (Alt: NVMJD8D1N04CTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NVMJD8D1N04CTWG
NVMJD8D1N04CTWG CAD Models
NVMJD8D1N04CTWG Part Data Attributes
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NVMJD8D1N04CTWG
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMJD8D1N04CTWG
onsemi
Dual N-Channel Power MOSFET 40 V, 46 A, 8.1 mΩ, 3000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 760AF | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 73 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 14.8 pF | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 37.5 W | |
| Pulsed Drain Current-Max (IDM) | 188 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |