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Transistors / Power Field-Effect Transistors / NVMFWS3D6N10MCLT1G
Datasheets
NVMFWS3D6N10MCLT1G by: onsemi

Single N-Channel Power MOSFET 100 V, 131 A, 3.6mΩ, DFNW5 4.90x5.90x1.00, 1.27P, 1500-REEL, Automotive Qualified

Part Details for NVMFWS3D6N10MCLT1G by onsemi

Results Overview of NVMFWS3D6N10MCLT1G by onsemi

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Applications Industrial Automation Computing and Data Storage Telecommunications

NVMFWS3D6N10MCLT1G Information

NVMFWS3D6N10MCLT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NVMFWS3D6N10MCLT1G

Part # Distributor Description Stock Price Buy
DISTI # 77AH0638
Newark Ptng 100V Ll Nch So-8Fl Wettable Flank For Automotive Market/ Reel Rohs Compliant: Yes |Onsemi NVMFW... S3D6N10MCLT1G more RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $2.2100
  • 3,000 $2.0700
  • 6,000 $1.9700
  • 12,000 $1.7700
  • 18,000 $1.7100
  • 30,000 $1.6400
$1.6400 / $2.2100 Buy Now
DISTI # 488-NVMFWS3D6N10MCLT1GCT-ND
DigiKey PTNG 100V LL NCH SO-8FL WETTABLE Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 503
In Stock
  • 1 $2.9200
  • 10 $2.4890
  • 100 $1.9482
  • 500 $1.7265
  • 1,500 $1.6381
$1.6381 / $2.9200 Buy Now
DISTI # NVMFWS3D6N10MCLT1G
Avnet Americas Power MOSFET N-Channel 100V 132A 5-Pin DFN T/R - Tape and Reel (Alt: NVMFWS3D6N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 14 Weeks, 0 Days Container: Reel 7500 Factory Stock
  • 1,500 $1.7299
  • 3,000 $1.7037
  • 6,000 $1.6774
  • 9,000 $1.6512
  • 12,000 $1.6250
$1.6250 / $1.7299 Buy Now
DISTI # 863-NVMFWS3D6N10MCLT
Mouser Electronics MOSFETs Single N-Channel Power MOSFET 100 V, 131 A, 3.6mohm RoHS: Compliant 12966
  • 1 $2.7400
  • 10 $2.4100
  • 25 $2.4000
  • 100 $1.9100
  • 250 $1.8400
  • 500 $1.6600
  • 1,500 $1.6500
$1.6500 / $2.7400 Buy Now
Onlinecomponents.com Single N-Channel Power MOSFET 100 V, 131 A, 3.6mΩ RoHS: Compliant 0
  • 250 $1.7200
  • 500 $1.7000
  • 1,500 $1.6200
  • 3,000 $1.5900
  • 6,000 $1.5700
$1.5700 / $1.7200 Buy Now
DISTI # NVMFWS3D6N10MCL
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 0
  • 1,500 $1.6400
$1.6400 Buy Now
DISTI # SMC-NVMFWS3D6N10MCLT1G
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 2208 28500
RFQ
DISTI # SMC-NVMFWS3D6N10MCLT1G
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 2201 936
RFQ
DISTI # NVMFWS3D6N10MCLT1G
Avnet Asia Power MOSFET N-Channel 100V 132A 5-Pin DFN T/R (Alt: NVMFWS3D6N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 14 Weeks, 0 Days 7500
  • 1,500 $1.2450
  • 3,000 $1.1795
$1.1795 / $1.2450 Buy Now
DISTI # NVMFWS3D6N10MCLT1G
Avnet Silica (Alt: NVMFWS3D6N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NVMFWS3D6N10MCLT1G
EBV Elektronik (Alt: NVMFWS3D6N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for NVMFWS3D6N10MCLT1G

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NVMFWS3D6N10MCLT1G Part Data Attributes

Parametric Data
NVMFWS3D6N10MCLT1G onsemi
Buy Now Datasheet
Compare Parts:
NVMFWS3D6N10MCLT1G onsemi Single N-Channel Power MOSFET 100 V, 131 A, 3.6mΩ, DFNW5 4.90x5.90x1.00, 1.27P, 1500-REEL, Automotive Qualified
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DFNW5 4.90x5.90x1.00, 1.27P
Package Description SO-8FL, DFN5, 6 PIN
Manufacturer Package Code 507BA
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 739 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 132 A
Drain-source On Resistance-Max 0.0036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 139 W
Pulsed Drain Current-Max (IDM) 888 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

NVMFWS3D6N10MCLT1G Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • To ensure reliable data retention in extreme temperatures, it is recommended to follow the recommended operating conditions and storage guidelines outlined in the datasheet. Additionally, using error correction codes and implementing data redundancy can help mitigate data loss due to temperature fluctuations.

  • Using a lower voltage supply than the recommended 3.3V may result in reduced performance, increased access times, and potential data loss. It is not recommended to operate the device below the minimum recommended voltage to ensure reliable operation.

  • The NVMFSW3D6N10MCLT1G is not designed to operate in radiation-intensive environments. If your application requires radiation-hardened devices, you should consider using a different component specifically designed for such environments.

  • The recommended method for erasing the device is to use the chip erase command (60h) followed by a sector erase command (D8h) for each sector to be erased. Refer to the datasheet for detailed erase procedures.