Datasheets
NVMFS5C456NLT1G by: onsemi

Single N-Channel Power MOSFET 40V, 87A, 3.7mΩ Power MOSFET 40V 87A 3.7mOhm Single N-Channel SO-8FL, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified

Part Details for NVMFS5C456NLT1G by onsemi

Results Overview of NVMFS5C456NLT1G by onsemi

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NVMFS5C456NLT1G Information

NVMFS5C456NLT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NVMFS5C456NLT1G

Part # Distributor Description Stock Price Buy
DISTI # NVMFS5C456NLT1G-ND
DigiKey MOSFET N-CH 40V 5DFN Lead time: 20 Weeks Container: Tape & Reel (TR) Limited Supply - Call
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DISTI # NVMFS5C456NLT1G
Avnet Americas Trans MOSFET N-CH 40V 87A 5-Pin DFN EP T/R - Tape and Reel (Alt: NVMFS5C456NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Container: Reel 0
RFQ
DISTI # 863-NVMFS5C456NLT1G
Mouser Electronics MOSFETs T6 40V NCH LL IN SO8 RoHS: Compliant 0
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Flip Electronics Stock 74000
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Part Details for NVMFS5C456NLT1G

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NVMFS5C456NLT1G Part Data Attributes

NVMFS5C456NLT1G onsemi
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Compare Parts:
NVMFS5C456NLT1G onsemi Single N-Channel Power MOSFET 40V, 87A, 3.7mΩ Power MOSFET 40V 87A 3.7mOhm Single N-Channel SO-8FL, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ONSEMI
Part Package Code SO-8FL / DFN-5
Manufacturer Package Code 488AA
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 202 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 87 A
Drain-source On Resistance-Max 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 21 pF
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 55 W
Pulsed Drain Current-Max (IDM) 520 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for NVMFS5C456NLT1G

This table gives cross-reference parts and alternative options found for NVMFS5C456NLT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVMFS5C456NLT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NVMFS5C456NLT3G onsemi Check for Price Single N-Channel Power MOSFET 40V, 87A, 3.7mΩ Power MOSFET 40V 87A 3.7mOhm Single N-Channel SO-8FL, SO-8FL / DFN-5, 5000-REEL, Automotive Qualified NVMFS5C456NLT1G vs NVMFS5C456NLT3G
NVMFS5C456NLWFT1G onsemi Check for Price Single N-Channel Power MOSFET 40V, 87A, 3.7mΩ Power MOSFET 40V 87A 3.7mOhm Single N-Channel SO-8FL WF, DFNW5 4.90x5.90x1.00, 1.27P, 1500-REEL, Automotive Qualified NVMFS5C456NLT1G vs NVMFS5C456NLWFT1G

NVMFS5C456NLT1G Related Parts

NVMFS5C456NLT1G Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • Use a temperature sensor to monitor the device temperature and implement a temperature compensation mechanism to adjust the programming voltage and timing accordingly.

  • Power up the device in the following sequence: VCC, then VPP, and finally the clock signal. Ensure that VCC and VPP are stable before applying the clock signal.

  • Implement error detection and correction mechanisms, such as ECC or CRC, to detect and correct errors during page erase and programming operations.

  • Use a secure boot mechanism, such as a secure boot loader, to authenticate the firmware and prevent unauthorized access to the device.