Datasheets
NVMFS5C410NLT1G by: onsemi

Single N-Channel Power MOSFET 40V, 330A, 0.82mΩ 1500 / Tape & Reel, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified

Part Details for NVMFS5C410NLT1G by onsemi

Results Overview of NVMFS5C410NLT1G by onsemi

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Applications Energy and Power Systems Renewable Energy

NVMFS5C410NLT1G Information

NVMFS5C410NLT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NVMFS5C410NLT1G

Part # Distributor Description Stock Price Buy
DISTI # NVMFS5C410NLT1G-ND
DigiKey MOSFET N-CH 40V 48A/315A 5DFN Lead time: 20 Weeks Container: Tape & Reel (TR) Limited Supply - Call
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DISTI # NVMFS5C410NLT1G
Avnet Americas Trans MOSFET N-CH 40V 315A 5-Pin DFN T/R - Tape and Reel (Alt: NVMFS5C410NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Container: Reel 0
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DISTI # 863-NVMFS5C410NLT1G
Mouser Electronics MOSFETs NFET SO8FL 40V 315A 900MO 0
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Bristol Electronics   Min Qty: 1 309
  • 1 $8.9600
  • 4 $5.8240
  • 10 $4.4800
  • 29 $4.1816
  • 61 $3.8824
  • 124 $3.6736
$3.6736 / $8.9600 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 315A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET 247
  • 1 $12.0000
  • 34 $5.6000
  • 90 $5.2000
$5.2000 / $12.0000 Buy Now
DISTI # NVMFS5C410NLT1G
Avnet Silica Trans MOSFET NCH 40V 315A 5Pin DFN TR (Alt: NVMFS5C410NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 21 Weeks, 0 Days Silica - 0
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DISTI # NVMFS5C410NLT1G
EBV Elektronik Trans MOSFET NCH 40V 315A 5Pin DFN TR (Alt: NVMFS5C410NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 21 Weeks, 0 Days EBV - 0
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Flip Electronics Stock 4500
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Part Details for NVMFS5C410NLT1G

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NVMFS5C410NLT1G Part Data Attributes

NVMFS5C410NLT1G onsemi
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Compare Parts:
NVMFS5C410NLT1G onsemi Single N-Channel Power MOSFET 40V, 330A, 0.82mΩ 1500 / Tape & Reel, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ONSEMI
Part Package Code SO-8FL / DFN-5
Manufacturer Package Code 488AA
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Configuration SINGLE
Drain Current-Max (ID) 315 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) 30

NVMFS5C410NLT1G Related Parts

NVMFS5C410NLT1G Frequently Asked Questions (FAQ)

  • The recommended operating voltage range for NVMFS5C410NLT1G is 2.7V to 3.6V.

  • To ensure data integrity, it is recommended to follow the power-down and power-up sequences outlined in the datasheet, and to use a voltage supervisor or reset circuit to ensure that the device is properly initialized.

  • The NVMFS5C410NLT1G supports up to 100,000 erase cycles per sector.

  • Page and block locking can be handled using the device's built-in locking mechanisms, which allow specific pages or blocks to be locked to prevent accidental erasure or modification.

  • The typical programming time for NVMFS5C410NLT1G is around 2-3 milliseconds per page.