Part Details for NVMFS5C410NLT1G by onsemi
Results Overview of NVMFS5C410NLT1G by onsemi
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NVMFS5C410NLT1G Information
NVMFS5C410NLT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFS5C410NLT1G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NVMFS5C410NLT1G-ND
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DigiKey | MOSFET N-CH 40V 48A/315A 5DFN Lead time: 20 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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Buy Now | |
DISTI #
NVMFS5C410NLT1G
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Avnet Americas | Trans MOSFET N-CH 40V 315A 5-Pin DFN T/R - Tape and Reel (Alt: NVMFS5C410NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Container: Reel | 0 |
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RFQ | |
DISTI #
863-NVMFS5C410NLT1G
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Mouser Electronics | MOSFETs NFET SO8FL 40V 315A 900MO | 0 |
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Order Now | |
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Bristol Electronics | Min Qty: 1 | 309 |
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$3.6736 / $8.9600 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 315A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 247 |
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$5.2000 / $12.0000 | Buy Now |
DISTI #
NVMFS5C410NLT1G
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Avnet Silica | Trans MOSFET NCH 40V 315A 5Pin DFN TR (Alt: NVMFS5C410NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 21 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
NVMFS5C410NLT1G
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EBV Elektronik | Trans MOSFET NCH 40V 315A 5Pin DFN TR (Alt: NVMFS5C410NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock | 4500 |
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RFQ |
Part Details for NVMFS5C410NLT1G
NVMFS5C410NLT1G CAD Models
NVMFS5C410NLT1G Part Data Attributes
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NVMFS5C410NLT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMFS5C410NLT1G
onsemi
Single N-Channel Power MOSFET 40V, 330A, 0.82mΩ 1500 / Tape & Reel, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
Select a part to compare: |
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SO-8FL / DFN-5 | |
Manufacturer Package Code | 488AA | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 315 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Temperature-Max | 175 °C | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 167 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Time@Peak Reflow Temperature-Max (s) | 30 |
NVMFS5C410NLT1G Frequently Asked Questions (FAQ)
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The recommended operating voltage range for NVMFS5C410NLT1G is 2.7V to 3.6V.
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To ensure data integrity, it is recommended to follow the power-down and power-up sequences outlined in the datasheet, and to use a voltage supervisor or reset circuit to ensure that the device is properly initialized.
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The NVMFS5C410NLT1G supports up to 100,000 erase cycles per sector.
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Page and block locking can be handled using the device's built-in locking mechanisms, which allow specific pages or blocks to be locked to prevent accidental erasure or modification.
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The typical programming time for NVMFS5C410NLT1G is around 2-3 milliseconds per page.