Datasheets
NVMFS5A160PLZT1G by: onsemi

Single P-Channel Power MOSFET, -60 V, -100 A, 7.7 mΩ, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified

Part Details for NVMFS5A160PLZT1G by onsemi

Overview of NVMFS5A160PLZT1G by onsemi

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Price & Stock for NVMFS5A160PLZT1G

Part # Distributor Description Stock Price Buy
CHIPMALL.COM LIMITED   1112
  • 100 $1.9663
  • 1,000 $1.9073
$1.9073 / $1.9663 Buy Now
Win Source Electronics MOSFET P-CH 60V 15A/100A 5DFN / P-Channel 60 V 15A (Ta), 100A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL) 15000
  • 19 $2.6754
  • 46 $2.1952
  • 71 $2.1266
  • 98 $2.0580
  • 126 $1.9894
  • 169 $1.7836
$1.7836 / $2.6754 Buy Now
Wuhan P&S P-CH Power MOSFET,-60V,-100A,7.7m�� Min Qty: 1 42000
  • 1 $3.4700
  • 100 $2.2200
  • 500 $1.8300
  • 1,000 $1.6800
$1.6800 / $3.4700 Buy Now

Part Details for NVMFS5A160PLZT1G

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NVMFS5A160PLZT1G Part Data Attributes

NVMFS5A160PLZT1G onsemi
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NVMFS5A160PLZT1G onsemi Single P-Channel Power MOSFET, -60 V, -100 A, 7.7 mΩ, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code SO-8FL / DFN-5
Package Description SO-8FL, DFN5, 6 PIN
Manufacturer Package Code 488AA
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2017-02-15
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 335 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 0.0105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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