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Part Details for NVMFD6H840NLWFT1G by onsemi
Overview of NVMFD6H840NLWFT1G by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for NVMFD6H840NLWFT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38AH7289
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Newark | T8 80V Ll So8Fl Ds/ Reel Rohs Compliant: Yes |Onsemi NVMFD6H840NLWFT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.1600 / $1.4800 | Buy Now |
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DISTI #
488-NVMFD6H840NLWFT1GCT-ND
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DigiKey | MOSFET 2N-CH 80V 14A/74A 8DFN Min Qty: 1 Lead time: 25 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1398 In Stock |
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$1.1093 / $3.3700 | Buy Now |
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DISTI #
NVMFD6H840NLWFT1G
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Avnet Americas | Power MOSFET Dual N-Channel 80V 74A 6.9mOhm 8-Pin DFN Surface Mount T/R - Tape and Reel (Alt: NVMFD6H840NLWFT1G) RoHS: Compliant Min Qty: 569 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 15800 Partner Stock |
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$0.9570 | Buy Now |
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DISTI #
NVMFD6H840NLWFT1G
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Avnet Americas | Power MOSFET Dual N-Channel 80V 74A 6.9mOhm 8-Pin DFN Surface Mount T/R - Tape and Reel (Alt: NVMFD6H840NLWFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 25 Weeks, 0 Days Container: Reel | 15800 Factory Stock |
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$0.9650 | Buy Now |
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DISTI #
863-NVMFD6H840NLWF1G
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Mouser Electronics | MOSFETs T8 80V LL SO8FL DS RoHS: Compliant | 2981 |
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$1.1000 / $2.6400 | Buy Now |
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Future Electronics | Dual N-Channel Power Mosfet 80V 74 A. SO8FL CASE 506BT AECQ101 Qualified RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Lead time: 25 Weeks Container: Reel | 0Reel |
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$1.0800 / $1.1100 | Buy Now |
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Onlinecomponents.com | Dual N-Channel Power MOSFET 80 V, 74 A, 6.9 mΩ RoHS: Compliant | 0 |
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$1.1000 / $2.3100 | Buy Now |
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DISTI #
NVMFD6H840NLWFT1G
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Avnet Silica | Power MOSFET Dual N-Channel 80V 74A 6.9mOhm 8-Pin DFN Surface Mount T/R (Alt: NVMFD6H840NLWFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 26 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NVMFD6H840NLWFT1G
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EBV Elektronik | Power MOSFET Dual N-Channel 80V 74A 6.9mOhm 8-Pin DFN Surface Mount T/R (Alt: NVMFD6H840NLWFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 15800 |
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$0.8800 | RFQ |
Part Details for NVMFD6H840NLWFT1G
NVMFD6H840NLWFT1G CAD Models
NVMFD6H840NLWFT1G Part Data Attributes
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NVMFD6H840NLWFT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMFD6H840NLWFT1G
onsemi
Dual N-Channel Power MOSFET 80 V, 74 A, 6.9 mΩ, 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SO-8FL, DFN8, 8 PIN | |
| Manufacturer Package Code | 506BT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 297 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 11 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 336 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |