Part Details for NVMFD5853NLT1G by onsemi
Overview of NVMFD5853NLT1G by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NVMFD5853NLT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC3924
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Newark | Mosfet, Aec-Q101, Dual N-Ch, 40V, Dfn, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:34A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0084Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.4V, Rohs Compliant: Yes |Onsemi NVMFD5853NLT1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Part Details for NVMFD5853NLT1G
NVMFD5853NLT1G CAD Models
NVMFD5853NLT1G Part Data Attributes
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NVMFD5853NLT1G
onsemi
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Datasheet
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NVMFD5853NLT1G
onsemi
Dual N−Channel Logic Level Power MOSFET 40V, 34A, 10mΩ, DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual) | |
| Package Description | SOP-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 506BT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 24 W | |
| Pulsed Drain Current-Max (IDM) | 165 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for NVMFD5853NLT1G
This table gives cross-reference parts and alternative options found for NVMFD5853NLT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVMFD5853NLT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NVMFD5853NLWFT1G | Dual N−Channel Logic Level Power MOSFET 40V, 34A, 10mΩ, DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 1500-REEL, Automotive Qualified | onsemi | NVMFD5853NLT1G vs NVMFD5853NLWFT1G |