Datasheets
NVMFD5852NLWFT1G by: onsemi

Power MOSFET 40V, 44A, 6.9 mOhm, Dual N-Channel, SO8-FL, Logic Level., DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 1500-REEL, Automotive Qualified

Part Details for NVMFD5852NLWFT1G by onsemi

Overview of NVMFD5852NLWFT1G by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for NVMFD5852NLWFT1G

NVMFD5852NLWFT1G CAD Models

NVMFD5852NLWFT1G Part Data Attributes:

NVMFD5852NLWFT1G onsemi
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NVMFD5852NLWFT1G onsemi Power MOSFET 40V, 44A, 6.9 mOhm, Dual N-Channel, SO8-FL, Logic Level., DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 1500-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual)
Package Description SOP-8
Pin Count 8
Manufacturer Package Code 506BT
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 80 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 27 W
Pulsed Drain Current-Max (IDM) 329 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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