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Part Details for NVH4L080N120SC1 by onsemi
Overview of NVH4L080N120SC1 by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Industrial Automation
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Price & Stock for NVH4L080N120SC1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
74AH4861
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Newark | Mosfet, N-Ch, 1.2Kv, 29A, To-247 Rohs Compliant: Yes |Onsemi NVH4L080N120SC1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1167 |
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$8.2900 / $12.5100 | Buy Now |
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DISTI #
5556-NVH4L080N120SC1-ND
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DigiKey | SICFET N-CH 1200V 29A TO247-4 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
347 In Stock |
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$9.2080 / $10.5100 | Buy Now |
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DISTI #
NVH4L080N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET, NChannel - EliteSiC, 80 mohm, 1200 V, M1, TO2474L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L - Rail/Tube (Alt: NVH4L080N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$8.2504 | Buy Now |
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DISTI #
863-NVH4L080N120SC1
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Mouser Electronics | SiC MOSFETs SIC MOS TO247-4L 80MOHM 1200V RoHS: Compliant | 694 |
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$9.2000 / $9.4900 | Buy Now |
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DISTI #
V99:2348_24261763
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 29A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2335 | Americas - 339 |
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$8.9320 | Buy Now |
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Future Electronics | N-Channel 1200 V 29 A 170 W Through Hole Silicon Carbide MOSFET - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks Container: Tube | 0Tube |
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$9.2200 / $9.6800 | Buy Now |
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Onlinecomponents.com | Trans MOSFET N-CH SiC 1.2KV 29A Automotive AEC-Q101 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant | 0 |
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$9.1300 / $24.9300 | Buy Now |
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DISTI #
70373163
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Verical | Trans MOSFET N-CH SiC 1.2KV 29A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Date Code: 2335 | Americas - 339 |
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$8.9320 | Buy Now |
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Rochester Electronics | NVH4L080N120SC1 - Silicon Carbide MOSFET, N-Channel, 1200 V RoHS: Compliant Status: Active Min Qty: 1 | 168 |
|
$8.7000 / $10.2300 | Buy Now |
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DISTI #
NVH4L080N120SC1
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Richardson RFPD | SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 450 | 0 |
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$9.2100 | Buy Now |
Part Details for NVH4L080N120SC1
NVH4L080N120SC1 CAD Models
NVH4L080N120SC1 Part Data Attributes
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NVH4L080N120SC1
onsemi
Buy Now
Datasheet
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Compare Parts:
NVH4L080N120SC1
onsemi
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L, TO-247-4, 450-TUBE, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-247-4 | |
| Manufacturer Package Code | 340CJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 171 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 125 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE | |
| Turn-off Time-Max (toff) | 53 ns | |
| Turn-on Time-Max (ton) | 28 ns |