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Part Details for NVH4L040N120SC1 by onsemi
Overview of NVH4L040N120SC1 by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NVH4L040N120SC1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
74AH4860
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Newark | Mosfet, N-Ch, 1.2Kv, 58A, To-247 Rohs Compliant: Yes |Onsemi NVH4L040N120SC1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 885 |
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$14.5700 / $18.2100 | Buy Now |
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DISTI #
5556-NVH4L040N120SC1-ND
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DigiKey | SICFET N-CH 1200V 58A TO247-4 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
235 In Stock |
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$16.1783 / $18.9200 | Buy Now |
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DISTI #
NVH4L040N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET, NChannel - EliteSiC, 40 mohm, 1200 V, M1, TO2474L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?4L - Rail/Tube (Alt: NVH4L040N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$14.4958 | Buy Now |
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DISTI #
863-NVH4L040N120SC1
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Mouser Electronics | SiC MOSFETs SIC MOS TO247-4L 1200V 40MOHM AUTO PART RoHS: Compliant | 236 |
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$16.1700 / $16.6700 | Buy Now |
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DISTI #
V99:2348_24404834
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 58A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2335 | Americas - 390 |
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$15.6900 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 58 A 319 W Surface Mount SiC Power Mosfet - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks Container: Tube | 450Tube |
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$14.2200 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 58 A 319 W Surface Mount SiC Power Mosfet - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Lead time: 17 Weeks Container: Tube | 0Tube |
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$14.2200 / $14.5300 | Buy Now |
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Onlinecomponents.com | Trans MOSFET N-CH SiC 1.2KV 58A Automotive AEC-Q101 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant | 0 |
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$16.5500 / $46.3900 | Buy Now |
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Rochester Electronics | NVH4L040N120SC1 - Silicon Carbide MOSFET, N-Channel, 1200 V RoHS: Compliant Status: Active Min Qty: 1 | 348 |
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$15.2800 / $17.9800 | Buy Now |
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DISTI #
NVH4L040N120SC1
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Richardson RFPD | SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 450 | 0 |
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$16.1800 | Buy Now |
Part Details for NVH4L040N120SC1
NVH4L040N120SC1 CAD Models
NVH4L040N120SC1 Part Data Attributes
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NVH4L040N120SC1
onsemi
Buy Now
Datasheet
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Compare Parts:
NVH4L040N120SC1
onsemi
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?4L, TO-247-4, 450-TUBE, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-247-4 | |
| Manufacturer Package Code | 340CJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Date Of Intro | 2020-01-23 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 578 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 58 A | |
| Drain-source On Resistance-Max | 0.056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 11 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 319 W | |
| Pulsed Drain Current-Max (IDM) | 232 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE | |
| Turn-off Time-Max (toff) | 71 ns | |
| Turn-on Time-Max (ton) | 66 ns |
Alternate Parts for NVH4L040N120SC1
This table gives cross-reference parts and alternative options found for NVH4L040N120SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVH4L040N120SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTH4L040N120SC1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L, TO-247-4, 450-TUBE | onsemi | NVH4L040N120SC1 vs NTH4L040N120SC1 |