Datasheets
NVH4L020N120SC1 by:

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L, TO-247-4, 450-TUBE, Automotive Qualified

Part Details for NVH4L020N120SC1 by onsemi

Overview of NVH4L020N120SC1 by onsemi

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Price & Stock for NVH4L020N120SC1

Part # Distributor Description Stock Price Buy
DISTI # 74AH4859
Newark Mosfet, N-Ch, 1.2Kv, 102A, To-247 Rohs Compliant: Yes |Onsemi NVH4L020N120SC1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 258
  • 1 $39.8300
  • 10 $38.7300
  • 25 $37.6300
  • 50 $37.0800
  • 100 $32.9600
  • 250 $32.6900
  • 500 $32.4100
  • 1,000 $31.8600
$31.8600 / $39.8300 Buy Now
DISTI # 5556-NVH4L020N120SC1-ND
DigiKey SICFET N-CH 1200V 102A TO247 Min Qty: 1 Lead time: 17 Weeks Container: Tube 1363
In Stock
  • 1 $44.9800
  • 30 $35.3853
$35.3853 / $44.9800 Buy Now
DISTI # NVH4L020N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET, NChannel - EliteSiC, 20 mohm, 1200 V, M1, TO2474L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L - Rail/Tube (Alt: NVH4L020N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 450 $31.7052
$31.7052 Buy Now
DISTI # 863-NVH4L020N120SC1
Mouser Electronics SiC MOSFETs SIC MOS TO247-4L 20MOHM 1200V RoHS: Compliant 476
  • 1 $40.3800
  • 10 $39.5500
  • 30 $35.3800
$35.3800 / $40.3800 Buy Now
DISTI # V99:2348_24404833
Arrow Electronics Trans MOSFET N-CH SiC 1.2KV 101A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2236 Americas - 60
  • 1 $35.9300
$35.9300 Buy Now
DISTI # P40:2555_19938985
Arrow Electronics Trans MOSFET N-CH SiC 1.2KV 101A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Date Code: 2239 Europe - 3
  • 1 $17.3376
$17.3376 Buy Now
Future Electronics NVH4L02 Series 1200 V 20 mOhm 102 A N-Channel Mosfest - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 30 Lead time: 17 Weeks Container: Tube 0
Tube
  • 1 $37.2000
  • 4 $36.7200
  • 15 $36.2800
  • 40 $35.9500
  • 100 $35.4200
$35.4200 / $37.2000 Buy Now
Onlinecomponents.com Trans MOSFET N-CH SiC 1.2KV 101A Automotive AEC-Q101 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant 0
  • 113 $104.8400
  • 225 $53.7900
  • 338 $36.5600
  • 450 $35.8300
$35.8300 / $104.8400 Buy Now
DISTI # NVH4L020N120SC1
Richardson RFPD SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 450 0
  • 450 $35.3900
$35.3900 Buy Now
DISTI # NVH4L020N120SC1
Avnet Silica Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L (Alt: NVH4L020N120SC1) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days Silica - 180
Buy Now
DISTI # NVH4L020N120SC1
EBV Elektronik Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L (Alt: NVH4L020N120SC1) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 19 Weeks, 0 Days EBV - 180
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 30 150
  • 30 $65.4900
  • 150 $60.6000
$60.6000 / $65.4900 Buy Now

Part Details for NVH4L020N120SC1

NVH4L020N120SC1 CAD Models

NVH4L020N120SC1 Part Data Attributes

NVH4L020N120SC1 onsemi
Buy Now Datasheet
Compare Parts:
NVH4L020N120SC1 onsemi Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L, TO-247-4, 450-TUBE, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-247-4
Manufacturer Package Code 340CJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Date Of Intro 2020-01-23
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 264 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 102 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 24 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 510 W
Pulsed Drain Current-Max (IDM) 408 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE
Turn-off Time-Max (toff) 86 ns
Turn-on Time-Max (ton) 69 ns

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