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Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L, TO-247-4, 450-TUBE, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
74AH4859
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Newark | Mosfet, N-Ch, 1.2Kv, 102A, To-247 Rohs Compliant: Yes |Onsemi NVH4L020N120SC1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 258 |
|
$31.8600 / $39.8300 | Buy Now |
DISTI #
5556-NVH4L020N120SC1-ND
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DigiKey | SICFET N-CH 1200V 102A TO247 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
1363 In Stock |
|
$35.3853 / $44.9800 | Buy Now |
DISTI #
NVH4L020N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET, NChannel - EliteSiC, 20 mohm, 1200 V, M1, TO2474L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L - Rail/Tube (Alt: NVH4L020N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$31.7052 | Buy Now |
DISTI #
863-NVH4L020N120SC1
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Mouser Electronics | SiC MOSFETs SIC MOS TO247-4L 20MOHM 1200V RoHS: Compliant | 476 |
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$35.3800 / $40.3800 | Buy Now |
DISTI #
V99:2348_24404833
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 101A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2236 | Americas - 60 |
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$35.9300 | Buy Now |
DISTI #
P40:2555_19938985
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 101A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Date Code: 2239 | Europe - 3 |
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$17.3376 | Buy Now |
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Future Electronics | NVH4L02 Series 1200 V 20 mOhm 102 A N-Channel Mosfest - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 30 Lead time: 17 Weeks Container: Tube | 0Tube |
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$35.4200 / $37.2000 | Buy Now |
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Onlinecomponents.com | Trans MOSFET N-CH SiC 1.2KV 101A Automotive AEC-Q101 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant | 0 |
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$35.8300 / $104.8400 | Buy Now |
DISTI #
NVH4L020N120SC1
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Richardson RFPD | SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 450 | 0 |
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$35.3900 | Buy Now |
DISTI #
NVH4L020N120SC1
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Avnet Silica | Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L (Alt: NVH4L020N120SC1) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days | Silica - 180 |
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Buy Now |
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NVH4L020N120SC1
onsemi
Buy Now
Datasheet
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Compare Parts:
NVH4L020N120SC1
onsemi
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L, TO-247-4, 450-TUBE, Automotive Qualified
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-247-4 | |
Manufacturer Package Code | 340CJ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Date Of Intro | 2020-01-23 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 264 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 102 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 24 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T4 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 510 W | |
Pulsed Drain Current-Max (IDM) | 408 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE | |
Turn-off Time-Max (toff) | 86 ns | |
Turn-on Time-Max (ton) | 69 ns |