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Transistors / Power Field-Effect Transistors / NVD6415ANLT4G
Datasheets
NVD6415ANLT4G by: onsemi

TRANSISTOR POWER, FET, FET General Purpose Power

Part Details for NVD6415ANLT4G by onsemi

Results Overview of NVD6415ANLT4G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

NVD6415ANLT4G Information

NVD6415ANLT4G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NVD6415ANLT4G

Part # Distributor Description Stock Price Buy
Rochester Electronics NVD6415 - Power Field-Effect Transistor, 23A, 100V, 0.056ohm, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 29
  • 1 $0.5092
  • 25 $0.4990
  • 100 $0.4786
  • 500 $0.4583
  • 1,000 $0.4328
$0.4328 / $0.5092 Buy Now

Part Details for NVD6415ANLT4G

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NVD6415ANLT4G Part Data Attributes

Parametric Data
NVD6415ANLT4G onsemi
Buy Now Datasheet
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NVD6415ANLT4G onsemi TRANSISTOR POWER, FET, FET General Purpose Power
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK
Package Description DPAK-3/2
Pin Count 3/2
Manufacturer Package Code CASE 369AA-01
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 79 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 70 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 80 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

NVD6415ANLT4G Related Parts

NVD6415ANLT4G Frequently Asked Questions (FAQ)

  • The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad on the bottom of the package. A detailed layout guide can be found in the onsemi application note AND9093/D.

  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature (Tj) range, and the thermal shutdown feature should be enabled to prevent overheating.

  • The maximum allowed voltage on the input pins is the voltage rating of the device, which is 40V for the NVD6415ANLT4G. However, it's recommended to keep the input voltage below 35V to ensure reliable operation and to prevent damage to the device.

  • To protect the device from electrical overstress (EOS), it's recommended to use a TVS (transient voltage suppressor) diode or a zener diode on the input pins, and to follow proper PCB layout and design guidelines to minimize the risk of EOS damage.

  • The recommended input capacitor value and type depend on the specific application and operating conditions. A general guideline is to use a ceramic capacitor with a value between 1uF and 10uF, and a voltage rating of at least 50V. The capacitor should be placed as close as possible to the input pins to minimize noise and ripple.