Part Details for NVD4810NT4G-VF01 by onsemi
Overview of NVD4810NT4G-VF01 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NVD4810NT4G-VF01
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
65AC5126
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Newark | Nfet Dpak 30V 54A 10Mohm/Reel |Onsemi NVD4810NT4G-VF01 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for NVD4810NT4G-VF01
NVD4810NT4G-VF01 CAD Models
NVD4810NT4G-VF01 Part Data Attributes
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NVD4810NT4G-VF01
onsemi
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Datasheet
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NVD4810NT4G-VF01
onsemi
Single N-Channel Power MOSFET 30V, 54A, 10mΩ, 2500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Manufacturer Package Code | 369AA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 98 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.0157 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 200 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NVD4810NT4G-VF01
This table gives cross-reference parts and alternative options found for NVD4810NT4G-VF01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVD4810NT4G-VF01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTD50N03RT4 | 7.8A, 25V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369AA-01, DPAK-3 | onsemi | NVD4810NT4G-VF01 vs NTD50N03RT4 |
| NTD50N03RT4G | Power MOSFET 25 V, 45 A, Single N-Channel, DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL | onsemi | NVD4810NT4G-VF01 vs NTD50N03RT4G |
| STD50NH02LT4 | 50A, 24V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | NVD4810NT4G-VF01 vs STD50NH02LT4 |
| NTD4913N-1G | Power MOSFET 30V 32A 10.5 mOhm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE | onsemi | NVD4810NT4G-VF01 vs NTD4913N-1G |
| NTD60N02R-1G | Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE | onsemi | NVD4810NT4G-VF01 vs NTD60N02R-1G |
| NTD60N02R-1 | 32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 | onsemi | NVD4810NT4G-VF01 vs NTD60N02R-1 |
| NTD50N03R | 7.8A, 25V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369AA-01, DPAK-3 | onsemi | NVD4810NT4G-VF01 vs NTD50N03R |
| BSF053N03LTGXUSA1 | Power Field-Effect Transistor, 16A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | Infineon Technologies AG | NVD4810NT4G-VF01 vs BSF053N03LTGXUSA1 |
| STD55NH2LLT4 | 40A, 24V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | NVD4810NT4G-VF01 vs STD55NH2LLT4 |
| BSF053N03LTGXUMA1 | Power Field-Effect Transistor, 16A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | Infineon Technologies AG | NVD4810NT4G-VF01 vs BSF053N03LTGXUMA1 |