We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In
Transistors / Power Field-Effect Transistors / NVD3055L170T4G-VF01
Datasheets
NVD3055L170T4G-VF01 by: onsemi

N-Channel Power Logic Level MOSFET 60V, 9A, 170mΩ, DPAK-3, 2500-REEL, Automotive Qualified

Part Details for NVD3055L170T4G-VF01 by onsemi

Results Overview of NVD3055L170T4G-VF01 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

NVD3055L170T4G-VF01 Information

NVD3055L170T4G-VF01 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NVD3055L170T4G-VF01

Part # Distributor Description Stock Price Buy
DISTI # NVD3055L170T4G-VF01
Avnet Silica Power MOSFET N Channel 60 V 9 A 170 MilliOhms TO252 DPAK 3 Pins Surface Mount (Alt: NVD3055L170T4G-V... F01) more RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NVD3055L170T4G-VF01
Avnet Silica Power MOSFET N Channel 60 V 9 A 170 MilliOhms TO252 DPAK 3 Pins Surface Mount (Alt: NVD3055L170T4G-V... F01) more RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NVD3055L170T4G-VF01
EBV Elektronik Power MOSFET N Channel 60 V 9 A 170 MilliOhms TO252 DPAK 3 Pins Surface Mount (Alt: NVD3055L170T4G-V... F01) more RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation NFET DPAK 60V 9A 170MOHM RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $0.4431
$0.4431 Buy Now

Part Details for NVD3055L170T4G-VF01

NVD3055L170T4G-VF01 CAD Models

  • Part Symbol

    Part Symbol

  • Footprint

    footprint

  • 3D Model

    3D Model

Available Download Formats

Sign in to download CAD models Register or Sign In

By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy

NVD3055L170T4G-VF01 Part Data Attributes

Parametric Data
NVD3055L170T4G-VF01 onsemi
Buy Now Datasheet
Compare Parts:
NVD3055L170T4G-VF01 onsemi N-Channel Power Logic Level MOSFET 60V, 9A, 170mΩ, DPAK-3, 2500-REEL, Automotive Qualified
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 61 Weeks
Date Of Intro 2017-05-09
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 30 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 42 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 28.5 W
Power Dissipation-Max (Abs) 28.5 W
Pulsed Drain Current-Max (IDM) 27 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

NVD3055L170T4G-VF01 Related Parts

NVD3055L170T4G-VF01 Frequently Asked Questions (FAQ)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. A 4-layer PCB with a dedicated thermal layer is recommended.

  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings, and use a stable voltage source. Also, ensure that the input and output capacitors are properly sized and placed close to the device.

  • Critical thermal design considerations include ensuring good thermal conduction from the device to the PCB, using thermal interfaces like thermal tape or thermal grease, and providing adequate airflow around the device.

  • To troubleshoot issues, start by checking the device's thermal performance, ensuring proper cooling and airflow. Then, verify the input and output voltages, and check for any signs of physical damage or electrical overstress.

  • Recommended soldering and assembly techniques include using a soldering iron with a temperature range of 250-270°C, and ensuring that the device is properly aligned and secured to the PCB during assembly.