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Part Details for NTTFS4C02NTAG by onsemi
Overview of NTTFS4C02NTAG by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NTTFS4C02NTAG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31AC6732
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Newark | Mosfet, N-Ch, 30V, 170A, Wdfn-8, Transistor Polarity:N Channel, Continuous Drain Current Id:170A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.019Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V, Power Rohs Compliant: Yes |Onsemi NTTFS4C02NTAG Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.1100 / $1.6600 | Buy Now |
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DISTI #
31AC1069
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Newark | T6 30V Nch U8Fl/ Reel Rohs Compliant: Yes |Onsemi NTTFS4C02NTAG Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4200 / $0.5360 | Buy Now |
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DISTI #
NTTFS4C02NTAGOSCT-ND
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DigiKey | MOSFET N-CH 30V 170A 8WDFN Min Qty: 1 Lead time: 52 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1051 In Stock |
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$0.4038 / $1.0700 | Buy Now |
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DISTI #
NTTFS4C02NTAG
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Avnet Americas | Transistor MOSFET N-CH 30V 170A 8-Pin WDFN T/R - Tape and Reel (Alt: NTTFS4C02NTAG) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 52 Weeks, 0 Days Container: Reel | 0 |
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$0.4320 / $0.4836 | Buy Now |
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DISTI #
863-NTTFS4C02NTAG
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Mouser Electronics | MOSFET AFSM T6 30V NCH U8FL | 7181 |
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$0.4030 / $0.9400 | Buy Now |
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Rochester Electronics | NTTFS4C02N - Single N-Channel Power MOSFET 30V, 170A RoHS: Compliant Status: Active Min Qty: 1 | 4012 |
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$0.3997 / $0.4702 | Buy Now |
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Ameya Holding Limited | Min Qty: 1500 | 200 |
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$1.0613 / $1.1279 | Buy Now |
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DISTI #
NTTFS4C02NTAG
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Avnet Asia | Transistor MOSFET N-CH 30V 170A 8-Pin WDFN T/R (Alt: NTTFS4C02NTAG) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 52 Weeks, 0 Days | 0 |
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$0.6603 / $0.7386 | Buy Now |
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DISTI #
NTTFS4C02NTAG
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Avnet Silica | Transistor MOSFET N-CH 30V 170A 8-Pin WDFN T/R (Alt: NTTFS4C02NTAG) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 37 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NTTFS4C02NTAG
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EBV Elektronik | Transistor MOSFET N-CH 30V 170A 8-Pin WDFN T/R (Alt: NTTFS4C02NTAG) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NTTFS4C02NTAG
NTTFS4C02NTAG CAD Models
NTTFS4C02NTAG Part Data Attributes:
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NTTFS4C02NTAG
onsemi
Buy Now
Datasheet
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Compare Parts:
NTTFS4C02NTAG
onsemi
Single N−Channel Power MOSFET 30V, 170A, 2.25mΩ, 1500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 511AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 59 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 162 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.0031 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 55 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.7 W | |
| Pulsed Drain Current-Max (IDM) | 500 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |