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Single N-Channel Power MOSFET 100V, 236A, 2.0mΩ, DFNW-8, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTMTSC002N10MCTXG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
12AJ7256
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Newark | Mosfet, N-Ch, 100V, 236A, 175Deg C, 255W Rohs Compliant: Yes |Onsemi NTMTSC002N10MCTXG RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$2.9700 / $5.6600 | Buy Now |
DISTI #
86AK5844
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Newark | Mosfet, N-Ch, 100V, 236A, Dfnw Rohs Compliant: Yes |Onsemi NTMTSC002N10MCTXG RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$2.8500 | Buy Now |
DISTI #
488-NTMTSC002N10MCTXGCT-ND
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DigiKey | MOSFET N-CH 100V 45A/236A 8TDFNW Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5161 In Stock |
|
$2.6480 / $5.5500 | Buy Now |
DISTI #
NTMTSC002N10MCTXG
|
Avnet Americas | Power MOSFET, N Channel, 100 V, 236 A, 0.0017 ohm, DFNW, Surface Mount - Tape and Reel (Alt: NTMTSC0... more RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$2.6268 / $2.7963 | Buy Now |
DISTI #
863-TMTSC002N10MCTXG
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Mouser Electronics | MOSFETs Single N-Channel Power MOSFET 100V, 236A, 2.0mohm RoHS: Compliant | 5511 |
|
$2.6400 / $5.4400 | Buy Now |
DISTI #
E02:0323_16329237
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Arrow Electronics | Trans MOSFET N-CH 100V 45A 8-Pin TDFNW EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks Date Code: 2434 | Europe - 3000 |
|
$3.3643 / $3.8976 | Buy Now |
DISTI #
75545570
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RS | N-Channel MOSFET, 236 A, 100 V, 8-Pin TDFNW8 Onsemi | ON Semiconductor NTMTSC002N10MCTXG RoHS: Not Compliant Min Qty: 1 Package Multiple: 5 Lead time: 3 Weeks, 0 Days Container: Package | 0 |
|
$3.5800 | RFQ |
|
Onlinecomponents.com | Mosfet, N-Ch, 100V, 236A, 175Deg C, 255W Rohs Compliant: Yes |Onsemi NTMTSC002N10MCTXG RoHS: Compliant | 0 |
|
$2.7100 / $7.6300 | Buy Now |
DISTI #
87550337
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Verical | Trans MOSFET N-CH 100V 45A 8-Pin TDFNW EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2434 | Americas - 3000 |
|
$3.3918 / $3.9295 | Buy Now |
DISTI #
NTMTSC0010MCTXG
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
|
$2.6500 | Buy Now |
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NTMTSC002N10MCTXG
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMTSC002N10MCTXG
onsemi
Single N-Channel Power MOSFET 100V, 236A, 2.0mΩ, DFNW-8, 3000-REEL
Select a part to compare: |
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DFNW-8 | |
Package Description | QFN88, TDFNW-8 | |
Manufacturer Package Code | 507AN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 2223 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 236 A | |
Drain-source On Resistance-Max | 0.002 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 37 pF | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 255 W | |
Pulsed Drain Current-Max (IDM) | 900 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |