Part Details for NTMS4917NR2G by onsemi
Overview of NTMS4917NR2G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NTMS4917NR2G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86127004
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Verical | Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 1164 Package Multiple: 1 Date Code: 1101 | Americas - 59502 |
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$0.3223 | Buy Now |
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Rochester Electronics | NTMS4917N - Small Signal Field-Effect Transistor, 7.1A, 30V, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 59502 |
|
$0.2578 / $0.3033 | Buy Now |
Part Details for NTMS4917NR2G
NTMS4917NR2G CAD Models
NTMS4917NR2G Part Data Attributes
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NTMS4917NR2G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMS4917NR2G
onsemi
Power MOSFET, 30 V, 10.5 A, N-Channel, SOIC-8 Narrow Body, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOIC-8 Narrow Body | |
Package Description | SOIC-8 | |
Pin Count | 8 | |
Manufacturer Package Code | 751-07 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7.1 A | |
Drain-source On Resistance-Max | 0.011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |