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MOSFET, Power, Single N-Channel 60V, TCPAK10 5.1x7.5, 1.0P, 3000-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTMJST1D4N06CLTXG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
488-NTMJST1D4N06CLTXGCT-ND
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DigiKey | TRENCH 6 60V LFPAK 5X7 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Tape & Reel (TR), Digi-Reel® |
6000 In Stock |
|
$0.9427 / $2.5000 | Buy Now |
DISTI #
NTMJST1D4N06CLTXG
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Avnet Americas | TRENCH 6 60V LFPAK 5X7 - Tape and Reel (Alt: NTMJST1D4N06CLTXG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 15000 Factory Stock |
|
$0.8737 / $0.9301 | Buy Now |
DISTI #
863-NTMJSTD4N06CLTXG
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Mouser Electronics | MOSFETs TRENCH 6 60V LFPAK 5X7 RoHS: Compliant | 3000 |
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$1.1000 / $2.4500 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$0.8750 / $1.8320 | Buy Now |
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Flip Electronics | Stock | 15000 |
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RFQ | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 6000 |
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$1.2100 / $1.2900 | Buy Now |
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NTMJST1D4N06CLTXG
onsemi
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Datasheet
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Compare Parts:
NTMJST1D4N06CLTXG
onsemi
MOSFET, Power, Single N-Channel 60V, TCPAK10 5.1x7.5, 1.0P, 3000-REEL, Automotive Qualified
Select a part to compare: |
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TCPAK10 5.1x7.5, 1.0P | |
Manufacturer Package Code | 760AG | |
Reach Compliance Code | compliant | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 596 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 198 A | |
Drain-source On Resistance-Max | 0.00149 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 37.5 pF | |
JESD-30 Code | R-PDSO-G10 | |
Number of Elements | 1 | |
Number of Terminals | 10 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 116 W | |
Pulsed Drain Current-Max (IDM) | 900 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |