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Transistors / Power Field-Effect Transistors / NTMFS4C020NT1G
Datasheets
NTMFS4C020NT1G by: onsemi

Single N−Channel Power MOSFET 30 V, 303A, 0.9mΩ, SO-8FL / DFN-5, 1500-REEL

Part Details for NTMFS4C020NT1G by onsemi

Results Overview of NTMFS4C020NT1G by onsemi

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NTMFS4C020NT1G Information

NTMFS4C020NT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTMFS4C020NT1G

Part # Distributor Description Stock Price Buy
DISTI # 31AC1021
Newark Trench 6 30V Nch/ Reel Rohs Compliant: Yes |Onsemi NTMFS4C020NT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $0.9620
  • 2,500 $0.7770
  • 5,000 $0.7540
$0.7540 / $0.9620 Buy Now
DISTI # 488-NTMFS4C020NT1GCT-ND
DigiKey MOSFET N-CH 30V 47A/303A 5DFN Min Qty: 1 Lead time: 35 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 4206
In Stock
  • 1 $2.1100
  • 10 $1.4590
  • 100 $1.1418
  • 500 $0.9662
  • 1,500 $0.9996
  • 3,000 $0.7764
$0.7764 / $2.1100 Buy Now
DISTI # NTMFS4C020NT1G
Avnet Americas ONSNTMFS4C020NT1G - Tape and Reel (Alt: NTMFS4C020NT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 35 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.7649
  • 3,000 $0.7533
  • 6,000 $0.7418
  • 9,000 $0.7302
  • 12,000 $0.7186
$0.7186 / $0.7649 Buy Now
DISTI # NTMFS4C020NT1G
Avnet Americas ONSNTMFS4C020NT1G - Tape and Reel (Alt: NTMFS4C020NT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 35 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.7649
  • 3,000 $0.7533
  • 6,000 $0.7418
  • 9,000 $0.7302
  • 12,000 $0.7186
$0.7186 / $0.7649 Buy Now
DISTI # 863-NTMFS4C020NT1G
Mouser Electronics MOSFETs TRENCH 6 30V NCH RoHS: Compliant 1686
  • 1 $2.0700
  • 10 $1.4300
  • 100 $1.1400
  • 250 $1.0900
  • 500 $1.0200
  • 1,500 $1.0200
  • 3,000 $0.7760
  • 9,000 $0.7590
$0.7590 / $2.0700 Buy Now
Future Electronics NTMFS4 Series 30 V 47 A 0.7mOhm 3.2 W Surface Mount N-Channel Mosfet - SO-8FL RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Lead time: 35 Weeks Container: Reel 0
Reel
  • 1,500 $0.7600
  • 3,000 $0.7500
  • 4,500 $0.7400
$0.7400 / $0.7600 Buy Now
Onlinecomponents.com Single N−Channel Power MOSFET 30 V, 303A, 0.9mΩ RoHS: Compliant 0
  • 1,500 $0.8300
  • 3,000 $0.7700
  • 6,000 $0.7200
  • 12,000 $0.7100
$0.7100 / $0.8300 Buy Now
DISTI # NTMFS4C020NT1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 0
  • 1,500 $0.7200
$0.7200 Buy Now
Chip 1 Exchange INSTOCK 3081
RFQ
DISTI # NTMFS4C020NT1G
Avnet Asia ONSNTMFS4C020NT1G (Alt: NTMFS4C020NT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 35 Weeks, 0 Days 0
  • 1,500 $0.7625
  • 3,000 $0.7526
  • 4,500 $0.7429
  • 7,500 $0.7335
  • 15,000 $0.7154
  • 37,500 $0.6982
  • 75,000 $0.6818
$0.6818 / $0.7625 Buy Now
DISTI # NTMFS4C020NT1G
EBV Elektronik (Alt: NTMFS4C020NT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 37 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 3000
RFQ
LCSC 30V 370A 0.67m10V30A 161W 2.2V 1 N-channel DFN-5(5x6) MOSFETs ROHS 102
  • 1 $1.0779
  • 10 $0.9953
  • 30 $0.9463
  • 100 $0.6330
  • 500 $0.6103
  • 1,500 $0.5994
$0.5994 / $1.0779 Buy Now
Wuhan P&S 30V,0.67m��,370A,Single N-Channel Power MOSFET Min Qty: 1 2370
  • 1 $2.9400
  • 100 $1.8800
  • 500 $1.5500
  • 1,000 $1.4300
$1.4300 / $2.9400 Buy Now

Part Details for NTMFS4C020NT1G

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NTMFS4C020NT1G Part Data Attributes

Parametric Data
NTMFS4C020NT1G onsemi
Buy Now Datasheet
Compare Parts:
NTMFS4C020NT1G onsemi Single N−Channel Power MOSFET 30 V, 303A, 0.9mΩ, SO-8FL / DFN-5, 1500-REEL
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SO-8FL / DFN-5
Manufacturer Package Code 488AA
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 35 Weeks
Date Of Intro 2016-06-01
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 862 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 370 A
Drain-source On Resistance-Max 0.00095 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 350 pF
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 161 W
Pulsed Drain Current-Max (IDM) 900 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

NTMFS4C020NT1G Related Parts

NTMFS4C020NT1G Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The thermal pad should be connected to a large copper area to dissipate heat efficiently.

  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.

  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V for reliable operation.

  • Yes, but be aware of the device's switching characteristics and ensure proper PCB layout to minimize parasitic inductance and capacitance. Also, consider the device's gate charge and threshold voltage.

  • Use proper ESD handling procedures during assembly and storage. Consider adding ESD protection devices, such as TVS diodes, to the circuit.