Datasheets
NTMFS4982NFT1G by: onsemi

Single N-Channel Power MOSFET 30V, 207A, 1.3mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL

Part Details for NTMFS4982NFT1G by onsemi

Overview of NTMFS4982NFT1G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NTMFS4982NFT1G

Part # Distributor Description Stock Price Buy
DISTI # 72W2323
Newark Fetky So8Fl 30V 129A 1.3M/Reel Rohs Compliant: Yes |Onsemi NTMFS4982NFT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel 0
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DISTI # 13AC3894
Newark Mosfet, N-Ch, 30V, 207A, Soic-Fl, Transistor Polarity:N Channel, Continuous Drain Current Id:207A, Drain Source Voltage Vds:30V, On Resistance Rds(On):950µohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Onsemi NTMFS4982NFT1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
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Part Details for NTMFS4982NFT1G

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NTMFS4982NFT1G Part Data Attributes

NTMFS4982NFT1G onsemi
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NTMFS4982NFT1G onsemi Single N-Channel Power MOSFET 30V, 207A, 1.3mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code DFN5 5X6, 1.27P (SO 8FL)
Pin Count 5
Manufacturer Package Code 488AA
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 26.5 A
Drain-source On Resistance-Max 0.0019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 89.3 W
Pulsed Drain Current-Max (IDM) 350 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTMFS4982NFT1G

This table gives cross-reference parts and alternative options found for NTMFS4982NFT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMFS4982NFT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC016N03MSGATMA1 Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG NTMFS4982NFT1G vs BSC016N03MSGATMA1

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