Part Details for NTMFS4982NFT1G by onsemi
Overview of NTMFS4982NFT1G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NTMFS4982NFT1G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
72W2323
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Newark | Fetky So8Fl 30V 129A 1.3M/Reel Rohs Compliant: Yes |Onsemi NTMFS4982NFT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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DISTI #
13AC3894
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Newark | Mosfet, N-Ch, 30V, 207A, Soic-Fl, Transistor Polarity:N Channel, Continuous Drain Current Id:207A, Drain Source Voltage Vds:30V, On Resistance Rds(On):950µohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Onsemi NTMFS4982NFT1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Part Details for NTMFS4982NFT1G
NTMFS4982NFT1G CAD Models
NTMFS4982NFT1G Part Data Attributes
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NTMFS4982NFT1G
onsemi
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Datasheet
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NTMFS4982NFT1G
onsemi
Single N-Channel Power MOSFET 30V, 207A, 1.3mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DFN5 5X6, 1.27P (SO 8FL) | |
Pin Count | 5 | |
Manufacturer Package Code | 488AA | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 26.5 A | |
Drain-source On Resistance-Max | 0.0019 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 89.3 W | |
Pulsed Drain Current-Max (IDM) | 350 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NTMFS4982NFT1G
This table gives cross-reference parts and alternative options found for NTMFS4982NFT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMFS4982NFT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSC016N03MSGATMA1 | Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | NTMFS4982NFT1G vs BSC016N03MSGATMA1 |