Part Details for NTMFS4936NCT1G by onsemi
Overview of NTMFS4936NCT1G by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NTMFS4936NCT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
92T2177
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Newark | Nfet So8Fl 30V 79A 4Mohm/Reel |Onsemi NTMFS4936NCT1G Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
2832-NTMFS4936NCT1G-488-ND
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DigiKey | MOSFET N-CH 30V 11.6A/79A 5DFN Min Qty: 2000 Lead time: 20 Weeks Container: Tape & Reel (TR) MARKETPLACE PRODUCT |
4500 In Stock |
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$0.2600 | Buy Now |
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DISTI #
NTMFS4936NCT1G-ND
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DigiKey | MOSFET N-CH 30V 11.6A/79A 5DFN Min Qty: 2000 Lead time: 20 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
NTMFS4936NCT1G
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Avnet Americas | Trans MOSFET N-CH 30V 19.5A 8-Pin SO-FL T/R - Tape and Reel (Alt: NTMFS4936NCT1G) RoHS: Compliant Min Qty: 2632 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 4500 Partner Stock |
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$0.2356 / $0.2812 | Buy Now |
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Rochester Electronics | NTMFS4936 - Power Field-Effect Transistor, 11.6A, 30V, 0.0048ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 15000 |
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$0.2804 / $0.3299 | Buy Now |
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Flip Electronics | Stock, ship today | 4500 |
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$0.1900 | RFQ |
Part Details for NTMFS4936NCT1G
NTMFS4936NCT1G CAD Models
NTMFS4936NCT1G Part Data Attributes
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NTMFS4936NCT1G
onsemi
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Datasheet
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NTMFS4936NCT1G
onsemi
TRANSISTOR POWER, FET, FET General Purpose Power
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 488AA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 96.8 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 11.6 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 235 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |