Datasheets
NTMFS010N10GTWG by: onsemi

MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A, PQFN-8, 3000-REEL

Part Details for NTMFS010N10GTWG by onsemi

Results Overview of NTMFS010N10GTWG by onsemi

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NTMFS010N10GTWG Information

NTMFS010N10GTWG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTMFS010N10GTWG

Part # Distributor Description Stock Price Buy
DISTI # 81AJ0250
Newark 100V Mvsoa In Pqfn56 Package/ Reel |Onsemi NTMFS010N10GTWG RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 2,500 $1.3200
  • 5,000 $1.2800
$1.2800 / $1.3200 Buy Now
DISTI # 488-NTMFS010N10GTWGCT-ND
DigiKey 100V MVSOA IN PQFN56 PACKAGE Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2865
In Stock
  • 1 $3.6000
  • 10 $2.3590
  • 100 $1.6508
  • 500 $1.3484
  • 1,000 $1.2513
  • 3,000 $1.2255
$1.2255 / $3.6000 Buy Now
DISTI # NTMFS010N10GTWG
Avnet Americas 100V MVSOA IN PQFN56 PACKAGE - Tape and Reel (Alt: NTMFS010N10GTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel 12000 Factory Stock
  • 3,000 $1.1956
  • 6,000 $1.1895
  • 12,000 $1.1834
  • 18,000 $1.1773
  • 24,000 $1.1712
$1.1712 / $1.1956 Buy Now
DISTI # 863-NTMFS010N10GTWG
Mouser Electronics MOSFETs MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mohm, 83A MOSFET - Power, Single, N-Chan... nel, PQFN8, 100V, 10.8mohm, 83A more RoHS: Compliant 0
  • 1 $3.5800
  • 10 $2.3500
  • 100 $1.6500
  • 500 $1.3500
  • 1,000 $1.2600
  • 3,000 $1.2200
$1.2200 / $3.5800 Order Now
Onlinecomponents.com MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A MOSFET - Power, Single, N-Channel, PQFN8... , 100V, 10.8mΩ, 83A more RoHS: Compliant 0
  • 750 $3.3300
  • 1,500 $1.7600
  • 2,250 $1.2400
  • 3,000 $1.2200
$1.2200 / $3.3300 Buy Now
DISTI # NTMFS010N10GTWG
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $1.2300
$1.2300 Buy Now
DISTI # NTMFS010N10GTWG
Avnet Silica 100V MVSOA IN PQFN56 PACKAGE (Alt: NTMFS010N10GTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NTMFS010N10GTWG
EBV Elektronik 100V MVSOA IN PQFN56 PACKAGE (Alt: NTMFS010N10GTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock 12000
RFQ

Part Details for NTMFS010N10GTWG

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NTMFS010N10GTWG Part Data Attributes

NTMFS010N10GTWG onsemi
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NTMFS010N10GTWG onsemi MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A, PQFN-8, 3000-REEL
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code PQFN-8
Package Description QFN-8
Manufacturer Package Code 483AE
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 226 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 83 A
Drain-source On Resistance-Max 0.0108 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 60 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 1247 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON