Part Details for NTMFD6H840NLT1G by onsemi
Overview of NTMFD6H840NLT1G by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NTMFD6H840NLT1G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AH7225
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Newark | T8 80V Ll So8Fl Ds/ Reel |Onsemi NTMFD6H840NLT1G RoHS: Not Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.0300 / $1.3200 | Buy Now |
DISTI #
488-NTMFD6H840NLT1GCT-ND
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DigiKey | MOSFET 2N-CH 80V 14A/74A 8DFN Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1500 In Stock |
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$0.9905 / $3.1000 | Buy Now |
DISTI #
NTMFD6H840NLT1G
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Avnet Americas | T8 80V LL SO8FL DS - Tape and Reel (Alt: NTMFD6H840NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.8617 | Buy Now |
DISTI #
863-NTMFD6H840NLT1G
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Mouser Electronics | MOSFETs T8 80V LL SO8FL DS RoHS: Compliant | 0 |
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$0.9900 / $1.0000 | Order Now |
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Onlinecomponents.com | Dual N-Channel Power MOSFET 80V, 74A, 6.9mΩ Dual N-Channel Power MOSFET 80V, 74A, 6.9mΩ RoHS: Compliant | 0 |
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$0.9840 / $2.0600 | Buy Now |
DISTI #
NTMFD6H840NLT1G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 | 0 |
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$0.9900 | Buy Now |
Part Details for NTMFD6H840NLT1G
NTMFD6H840NLT1G CAD Models
NTMFD6H840NLT1G Part Data Attributes
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NTMFD6H840NLT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMFD6H840NLT1G
onsemi
Dual N-Channel Power MOSFET 80V, 74A, 6.9mΩ Dual N-Channel Power MOSFET 80V, 74A, 6.9mΩ, 1500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PDSO-F6 | |
Manufacturer Package Code | 506BT | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 25 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 297 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.0088 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 11 pF | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 90 W | |
Pulsed Drain Current-Max (IDM) | 336 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |