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Part Details for NTMD6N02R2G by onsemi
Overview of NTMD6N02R2G by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for NTMD6N02R2G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
70K4028
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Newark | N Channel Mosfet, 20V, Soic, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:12V, Gate Source Threshold Voltage Max:900Mv Rohs Compliant: Yes |Onsemi NTMD6N02R2G RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.3970 | Buy Now |
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DISTI #
NTMD6N02R2GOSCT-ND
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DigiKey | MOSFET 2N-CH 20V 3.92A 8SOIC Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
8300 In Stock |
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$0.2804 / $1.0000 | Buy Now |
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DISTI #
NTMD6N02R2G
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Tape and Reel (Alt: NTMD6N02R2G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.2439 | Buy Now |
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DISTI #
863-NTMD6N02R2G
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Mouser Electronics | MOSFETs NFET 20V 0.035R TR RoHS: Compliant | 0 |
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$0.3220 / $0.8500 | Order Now |
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Future Electronics | Dual N-Channel 20 V 35 mOhm 2 W Surface Mount Power MOSFET - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel | 0Reel |
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$0.2750 / $0.2950 | Buy Now |
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Onlinecomponents.com | Dual N-Channel 20 V 35 mOhm 2 W Surface Mount Power MOSFET - SOIC-8 | 0 |
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$0.2673 / $0.2913 | Buy Now |
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Bristol Electronics | 226 |
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RFQ | ||
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DISTI #
NTMD6N02R2G
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IBS Electronics | NTMD6N02R2G Dual N-channel MOSFET Transistor, 6.5 A, 20 V, 8-Pin SOIC Min Qty: 192 Package Multiple: 1 | 1855 |
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$2.2645 | Buy Now |
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DISTI #
NTMD6N02R2G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 | 0 |
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$0.2800 | Buy Now |
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DISTI #
NTMD6N02R2G
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Avnet Silica | Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R (Alt: NTMD6N02R2G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days | Silica - 2500 |
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Buy Now |
Part Details for NTMD6N02R2G
NTMD6N02R2G CAD Models
NTMD6N02R2G Part Data Attributes
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NTMD6N02R2G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMD6N02R2G
onsemi
Dual N-Channel Enhancement Mode Power MOSFET 20V, 6.5A, 35mΩ, SOIC-8 Narrow Body, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | SOIC-8 Narrow Body | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 751-07 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 360 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.92 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.73 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |