Part Details for NTMD4884NFR2G by onsemi
Overview of NTMD4884NFR2G by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for NTMD4884NFR2G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86126642
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Verical | NTMD4884NFR2G Min Qty: 1552 Package Multiple: 1 Date Code: 1101 | Americas - 31427 |
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$0.2418 | Buy Now |
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DISTI #
86133898
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Verical | NTMD4884NFR2G Min Qty: 1552 Package Multiple: 1 | Americas - 7085 |
|
$0.2418 | Buy Now |
|
DISTI #
86134429
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Verical | NTMD4884NFR2G Min Qty: 1552 Package Multiple: 1 Date Code: 1001 | Americas - 2500 |
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$0.2418 | Buy Now |
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Rochester Electronics | NTMD4884NF - Small Signal Field-Effect Transistor, 3.3A, 30V, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 43322 |
|
$0.1934 / $0.2275 | Buy Now |
Part Details for NTMD4884NFR2G
NTMD4884NFR2G CAD Models
NTMD4884NFR2G Part Data Attributes
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NTMD4884NFR2G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMD4884NFR2G
onsemi
Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel, SOIC-8 Narrow Body, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOIC-8 Narrow Body | |
| Package Description | SOIC-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 751-07 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 0.048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 42 pF | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 33 ns | |
| Turn-on Time-Max (ton) | 25 ns |