Part Details for NTMD2P01R2 by onsemi
Results Overview of NTMD2P01R2 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTMD2P01R2 Information
NTMD2P01R2 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTMD2P01R2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 73 |
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RFQ |
Part Details for NTMD2P01R2
NTMD2P01R2 CAD Models
NTMD2P01R2 Part Data Attributes
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NTMD2P01R2
onsemi
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Datasheet
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NTMD2P01R2
onsemi
2.3A, 16V, 0.1ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SOIC-8
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 751-07 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 350 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 16 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.71 W | |
| Pulsed Drain Current-Max (IDM) | 9 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTMD2P01R2
This table gives cross-reference parts and alternative options found for NTMD2P01R2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMD2P01R2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTMD2P01R2 | Rochester Electronics LLC | Check for Price | 2.3A, 16V, 0.1ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SOIC-8 | NTMD2P01R2 vs NTMD2P01R2 |
| NTMD2P01R2G | onsemi | Check for Price | Small Signal MOSFET 16V 2.3A 100 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL | NTMD2P01R2 vs NTMD2P01R2G |
| RF1K4909396 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 12V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | NTMD2P01R2 vs RF1K4909396 |
| RF1K4909396 | Intersil Corporation | Check for Price | 2.5A, 12V, 0.13ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA | NTMD2P01R2 vs RF1K4909396 |
| RF1K49093 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 12V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | NTMD2P01R2 vs RF1K49093 |