Part Details for NTLJS1102PTAG by onsemi
Overview of NTLJS1102PTAG by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for NTLJS1102PTAG
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | NTLJS1102P - Small Signal Field-Effect Transistor, 3.7A, 8V, P-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 36000 |
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$0.1658 / $0.1950 | Buy Now |
Part Details for NTLJS1102PTAG
NTLJS1102PTAG CAD Models
NTLJS1102PTAG Part Data Attributes
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NTLJS1102PTAG
onsemi
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Datasheet
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NTLJS1102PTAG
onsemi
Power MOSFET 8V 8.1A 36 mOhm Single P-Channel WDFN2x2, WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| parentfamilyid | 2136902 | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch | |
| Package Description | WDFN-6 | |
| Pin Count | 6 | |
| Manufacturer Package Code | 506AP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Description | Power MOSFET 8V 8.1A 36 mOhm Single P-Channel WDFN2x2 | |
| Samacsys Manufacturer | onsemi | |
| Samacsys Modified On | 2024-09-19 14:45:22 | |
| Total Weight | 20 | |
| Category CO2 Kg | 8.8 | |
| CO2 | 176 | |
| Compliance Temperature Grade | Military: -55C to +150C | |
| EU RoHS Version | RoHS 2 (2015/863/EU) | |
| CAS Accounted for Wt | 93 | |
| CA Prop 65 Presence | YES | |
| CA Prop 65 CAS Numbers | 1333-86-4 | |
| EFUP | e | |
| Conflict Mineral Status | DRC Conflict Free Undeterminable | |
| Conflict Mineral Status Source | FMD | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 8 V | |
| Drain Current-Max (ID) | 3.7 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |